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GSI Technology, Inc.
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Part No. |
GS8150V18AB-250 GS8150V36AB-250 GS8150V36AGB-250 GS8150V36AGB-250I GS8150V18AGB-300 GS8150V36AGB-333I GSITECHNOLOGY-GS8150V18AB-250T
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Description |
1M x 18, 512K x 36 18Mb Register-Register Late WrITE SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late WrITE SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late WrITE SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119 1M x 18, 512K x 36 18Mb Register-Register Late WrITE SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119
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File Size |
218.81K /
25 Page |
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it Online |
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GSI Technology, Inc.
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Part No. |
GS8160EV18AT-350 GS8160EV18AT-350I GS8160EV32AT-250I GS8160EV36AT-250 GS8160EV18AT-333IT GSITECHNOLOGY-GS8160EV32AT-333I
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Description |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 4.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 5.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100 1M X 18 CACHE SRAM, 4.7 ns, PQFP100
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File Size |
492.00K /
24 Page |
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it Online |
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SMSC, Corp. Micross Components
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Part No. |
MT48V4M32LFB5-8ITESG MT48V8M16LFB4-8ITESG MT48LC8M16LFB4-75MXT
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Description |
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, LEAD FREE, VFBGA-90 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, LEAD FREE, VFBGA-54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 8 MM, LEAD FREE, VFBGA-54
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File Size |
6,129.15K /
69 Page |
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it Online |
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Fujitsu Limited
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Part No. |
FTR-P1 FTR-P1CP009W1 FTR-P1CP012W1 FTR-P1CN010W1 FTR-P1CN009W1 FTR-P1CP010W1 FTR-P1CN012W1 FUJITSULIMITED-FTR-P1CP012W1
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Description |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.8 to 3.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.2 to 3.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.4 to 3.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.0 to 3.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.9 to 3.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.3 to 3.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.1 to 3.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.0 to 3.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.2 to 3.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
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File Size |
66.35K /
7 Page |
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it Online |
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Bom2Buy.com
Price and Availability
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JITONG
TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor |
Part: IT130 |
Maker: INTERSIL |
Pack: CAN6 |
Stock: Reserved |
Unit price
for : |
50: $2.22 |
100: $2.10 |
1000:
$1.99 |
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