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IRF[International Rectifier]
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Part No. |
irff310 2476
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OCR Text |
irff310 BVDSS 400V RDS(on) 3.6 ID 1.25A
irff310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL
The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient ... |
Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF) REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF) From old datasheet system REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
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File Size |
128.27K /
7 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
irff310 FN1888
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OCR Text |
irff310
Data Sheet March 1999 File Number 1888.3
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to ... |
Description |
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET From old datasheet system 1.35A 400V 3.600 Ohm N-Channel Power MOSFET 1.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET
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File Size |
324.08K /
7 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
JANTXV2N6786 JANTX2N6786
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OCR Text |
...REF:MIL-PRF-19500/556] [GENERIC:irff310]
N-CHANNEL Product Summary
Part Number JANTX2N6786 JANTXV2N6786 BVDSS 400V RDS(on) 3.6 ID 1.25A
400 Volt, 3.6 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of p... |
Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)
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File Size |
190.65K /
6 Page |
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it Online |
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