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Motorola, Inc. MOTOROLA[Motorola, Inc]
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Part No. |
MRF19125 MRF19125S MRF19125SR3
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OCR Text |
...f1 = 1987.5 MHz, f2 = 1990 MHz) intermodulation Distortion (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 M... |
Description |
RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
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File Size |
359.33K /
12 Page |
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Motorola, Inc
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Part No. |
MRF19090 MRF19090S MRF19090SR3
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OCR Text |
...ne Spacing = 100 kHz) 3rd Order intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 199... |
Description |
MRF19090, MRF19090S, MRF19090SR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
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File Size |
297.54K /
8 Page |
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it Online |
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Motorola, Inc
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Part No. |
MRF21030D MRF21030R3 MRF21030SR3
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OCR Text |
...MHz, f2 = 2140.1 MHz) 3rd Order intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two... |
Description |
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
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File Size |
372.54K /
8 Page |
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it Online |
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Freescale Semiconductor, Inc
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Part No. |
MRF21030LR3 MRF21030LSR3
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OCR Text |
...MHz, f2 = 2140.1 MHz) 3rd Order intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Two... |
Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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File Size |
403.08K /
8 Page |
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it Online |
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Motorola, Inc
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Part No. |
MRF21120
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OCR Text |
... = 2170.0 MHz, f2 = 2170.1 MHz) intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Common-Source... |
Description |
MRF21120 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFETs The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET
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File Size |
385.56K /
8 Page |
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it Online |
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Price and Availability
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