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Integrated Silicon Solution, Inc. Alliance Semiconductor
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Part No. |
AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-60TI
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OCR Text |
...be strobed. Outputs remain high impedence. * Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with previous valid data. * CAS-before-RAS refresh (CBR): CAS is assert... |
Description |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM 4M x 4 CMOS DRAM (EDO) Family
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File Size |
252.96K /
15 Page |
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it Online |
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SGS Thomson Microelectronics
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Part No. |
AN994
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OCR Text |
...cth1 = 12V, Vccth2 = 10V). High impedence pin with two functionalities. When pulled to a voltage lower than Vdt [Typ.0.5V] the device is shut down. A voltage higher than Vdt sets the dead time between high side and low side gate driver. The... |
Description |
L6384, L6385, L6386 & L6387 HIGH VOLTAGE DRIVERS APPLICATION GUIDE
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File Size |
130.75K /
17 Page |
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it Online |
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Alliance Semiconductor, Corp.
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Part No. |
AS4C4M4F1Q-50JC AS4C4M4F1Q-60JC
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OCR Text |
...be strobed. Outputs remain high impedence. * Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with previous valid data. * CAS-before-RAS refresh (CBR): CAS is assert... |
Description |
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
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File Size |
255.13K /
16 Page |
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it Online |
Download Datasheet |
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ALLIANCE SEMICONDUCTOR CORP
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Part No. |
AS4C4M4F1Q-50TC AS4C4M4F1Q-60TC AS4C4M4F1Q-60JC
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OCR Text |
...be strobed. Outputs remain high impedence. * Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with previous valid data. * CAS-before-RAS refresh (CBR): CAS is assert... |
Description |
DRAM|FAST PAGE|4MX4|CMOS|SOJ|28PIN|PLASTIC DRAM|FAST PAGE|4MX4|CMOS|TSOP|28PIN|PLASTIC 4M X 4 FAST PAGE DRAM, 60 ns, PDSO28
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File Size |
311.50K /
14 Page |
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it Online |
Download Datasheet |
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Price and Availability
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