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IXYS
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| Part No. |
IXFH15N80
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| OCR Text |
hdmos tm family symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 14n80 14 a 15n80 15 a i dm t c = 25 c,... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
110.60K /
4 Page |
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it Online |
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IXYS
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| Part No. |
IXFH26N50 IXFM21N50
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| OCR Text |
...ent mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) to-204 ae (ixfm) d g features ? international standard packages ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (u... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
162.92K /
4 Page |
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it Online |
Download Datasheet |
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IXYS, Corp.
ETC
IXYS Corporation
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| Part No. |
IXFM13N90 IXFH10N90 IXYSCORP-IXFT13N90
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| OCR Text |
...ent mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) to-204 aa (ixfm) g = gate, d = drain, s = source, tab = drain features international standard packages low r ds (on) hdmos tm process rugged polysilicon gate cell str... |
| Description |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强HiPerFET功率MOSFET) 10 A, 900 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs
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| File Size |
84.89K /
4 Page |
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it Online |
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IXYS, Corp.
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| Part No. |
IXFH16N90
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| OCR Text |
...ent mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) features l international standard packages l low r ds (on) hdmos tm process l rugged polysilicon gate cell structure l unclamped inductive switching (uis) rated l low packa... |
| Description |
HiPerFET Power MOSFETs 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
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| File Size |
265.92K /
2 Page |
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it Online |
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IXYS
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| Part No. |
IFRP460
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| OCR Text |
... ad n-channel enhancement mode, hdmos tm family symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a24v i gss v ... |
| Description |
Power MOSFET
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| File Size |
132.99K /
4 Page |
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it Online |
Download Datasheet |
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IXYS CORP
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| Part No. |
IXFH21N50
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| OCR Text |
...ent mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) to-204 ae (ixfm) d g features international standard packages low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (u... |
| Description |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.25惟??娌??澧?己??HiPerFET???MOSFET)
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| File Size |
68.65K /
2 Page |
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it Online |
Download Datasheet |
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