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Giga
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| Part No. |
GD20482
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| OCR Text |
...ll laser with InGaAsP epilayers grown on InP by MOVPE. The source is a partly coherent gain-guided broad area emitter with closely spaced st...junction. In the plane parallel to the laser diode junction the radiation exhibits a complex pattern... |
| Description |
Open Heat Sink High Power Laser Diode
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| File Size |
559.24K /
5 Page |
 View
it Online |
Download Datasheet
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Giga
|
| Part No. |
GD20483
|
| OCR Text |
...ll laser with InGaAsP epilayers grown on InP by MOVPE. The source is a partly coherent gain-guided broad area emitter with closely spaced st...junction. In the plane parallel to the laser diode junction the radiation exhibits a complex pattern... |
| Description |
Open Heat Sink High Power Laser Diode
|
| File Size |
549.58K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
MOTOROLA[Motorola, Inc]
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| Part No. |
AN211A
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| OCR Text |
...onto which an n-type channel is grown epitaxially. A p-type gate is then diffused into the n-type epitaxial channel. Contact metallization c...Junction FET with Single-Ended Geometry
SOURCE N DRAIN N
Figure 4. Development of Enhancement-Mo... |
| Description |
FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE
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| File Size |
327.70K /
12 Page |
View
it Online |
Download Datasheet |
|
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