Description |
Diameter: 50.8mm; lCW substrates; silicon carbide substrates. For high frequency power lor='#FF0000'>devices, high power lor='#FF0000'>devices, high temperature lor='#FF0000'>devices, optoelectronic lor='#FF0000'>devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power lor='#FF0000'>devices, high power lor='#FF0000'>devices, high temperature lor='#FF0000'>devices, optoelectronic lor='#FF0000'>devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power lor='#FF0000'>devices, high power lor='#FF0000'>devices, high temperature lor='#FF0000'>devices, optoelectronic lor='#FF0000'>devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power lor='#FF0000'>devices, high power lor='#FF0000'>devices, high temperature lor='#FF0000'>devices, optoelectronic lor='#FF0000'>devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power lor='#FF0000'>devices, high power lor='#FF0000'>devices, high temperature lor='#FF0000'>devices, optoelectronic lor='#FF0000'>devices, III-V nitride deposition Diameter: 76.2mm; lCW type; 6H-silicon carbide. For high frequency power lor='#FF0000'>devices, high power lor='#FF0000'>devices, high temperature lor='#FF0000'>devices, optoelectronic lor='#FF0000'>devices, III-V nitride deposition Diameter: 50.8mm; lCW type; 6H-silicon carbide. For high frequency power lor='#FF0000'>devices, high power lor='#FF0000'>devices, high temperature lor='#FF0000'>devices, optoelectronic lor='#FF0000'>devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power lor='#FF0000'>devices, high power lor='#FF0000'>devices, high temperature lor='#FF0000'>devices, optoelectronic lor='#FF0000'>devices, III-V nitride deposition
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