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NEC[NEC]
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| Part No. |
NE71300-N NE71300-M NE71300-L NE713 NE71383B
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| OCR Text |
FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
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| Description |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
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| File Size |
87.85K /
16 Page |
 View
it Online |
Download Datasheet
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Atmel Corp
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| Part No. |
U2730B-N
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| OCR Text |
...use to control a dual-gate GaAs-FET in front of the U2730B-N to archieve an extended AGC-range. By applying an external voltage to the Pin AGC, the internal AGC loop can be overdriven.
Frequency Synthesizer
The frequency synthesizer blo... |
| Description |
L-band down-converter incl. PLL for DAB receivers
From old datasheet system
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| File Size |
111.59K /
14 Page |
View
it Online |
Download Datasheet |
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Atmel
|
| Part No. |
U2730B-N
|
| OCR Text |
...use to control a dual-gate GaAs-FET in front of the U2730B-N to archieve an extended AGC-range. By applying an external voltage to the Pin AGC, the internal AGC loop can be overdriven.
Frequency Synthesizer
The frequency synthesizer blo... |
| Description |
Improved L-Band Down-Converter for DAB Receivers
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| File Size |
111.14K /
13 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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