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For epi Found Datasheets File :: 899 Search Time::1.422ms
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				SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KA8507
OCR Text	... 20 11 12 13 logic cb cpi- cpi+ epi- epi+ do erc eo cb eb gnd vcc emute bypath cmute fo fi co di crc agic 5.1k 3.3k filter amp - 20 c ~ + 70 c ordering information 20-dip-300a 20-sop-375 fig. 1 ka8507 ...
Description	Automatic Gain Control System Used For Dynamic Range Compression And Expansion(用于动态压缩扩展的自动增益控制系统)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	KB8527 KB8527BQ
OCR Text	...fier PRI + - 23 22 ALC epi 1LOI 39 1LOI 40 RX VCO Quad Detector AMP Carrier Detector 21 ERC SUM AMP 20 EO 19 SAI 18 SAO1 SPK AMP 17 SAO2 16 VCC (COMP) VCO 41 RX 1st MIX IF AMP (10.7MHz) 1MI 42 1MI 43 GN...
Description	1 CHIP CLP SUBSYSTEM IC
File Size	150.02K / 21 Page	View it Online	Download Datasheet

				CREE POWER
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
OCR Text	...0 = single side polish, si face epi ready c = single side polish, c face epi ready d = double side polish, si face epi ready g = double side polish, c face epi ready 1 = cmp polish, si face epi ready 2 = double side cmp polish, si face epi ...
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				MAXWELL[Maxwell Technologies]
Part No.	7206FRPFS-50 7206F 7206FRPFB-15 7206FRPFB-20 7206FRPFB-30 7206FRPFB-40 7206FRPFB-50 7206FRPFE-15 7206FRPFE-20 7206FRPFE-30 7206FRPFE-40 7206FRPFE-50 7206FRPFI-15 7206FRPFI-20 7206FRPFI-30 7206FRPFI-40 7206FRPFI-50 7206FRPFS-15 7206FRPFS-20 7206FRPFS-30 7206FRPFS-40 7206FRPFB20 7206FRPFB30 7206FRPFB40 7206FRPES20 7206FRPES50 7206FRPFE20 7206FRPES15 7206FRPES40 7206FRPES30 7206FRPFI30 7206FRPEB30 7206FRPEB40 7206FRPEB50 7206FRPEBE0 7206FRPFE30 7206FRPFE50 7206FRPFE15 7206FRPFI40
OCR Text	epi-CMOS (16K x 9-Bit) Parallel FIFO I 7206F 7206F Logic Diagram Memory FEATURES: * 16K x 9-bit organization * RAD-PAK(R) radiation-hardened against natural space radiation * A total dose hardness: - > 100 krad (Si), depend...
Description	High-Speed epi-CMOS (16K x 9-Bit) Parallel FIFO
File Size	205.75K / 15 Page	View it Online	Download Datasheet

				PCA[PCA ELECTRONICS INC.]
Part No.	EPZ3033-822 epi0L3552KSP45L epi0L3702KSP56 epi0L4512KSP45L epi0L4592KSP45 epi0L6243BHC44 epi0L6243BHC68 epi0L6542KSP45 epi0L7143BH38 epi0L7452KSP45L epi0L8103B44 epi0L8303D8763 epi0L8502KSP45 epi0L8502KSP56 epi0L9133BH38 epi100102F1818 epi100102G1816 epi100103D8763 epi100132F2222 epi100152B30 epi100162F3030L epi100162KSP45 epi100172F2626L epi100182F3030 epi100202F2626 epi100212KSP56 epi100232G4036L epi100262G4036 epi100342B38 epi100382BSP30 epi100402B37F epi100402F4747L epi100442F4040 epi100452B44 epi100452F4747LP epi100542F4747 epi100552B50 epi100601F1818L epi100801B20 epi101122B50 epi101122F4747LP epi101132B37F epi101132F4040 epi101132F4747L epi101152B44 epi101172F4747 epi101261B20 epi101291F1818 epi101421F2222 epi101481B30 epi101501F3030L epi101541F2626L epi101601F3030 epi101651F2626 epi101741G4036L epi101821B38 epi101971G4036 epi102161F3030L epi102181F3030 epi102221G4036 epi102401F4747L epi102481B44 epi102501B50 epi102551F4747 epi111941BH30 epi120152F3030L epi120212G4036L epi120242G4036 epi120282B38 epi120402F4747LP epi120561F1818L epi120971G1816 epi121112F4747LP epi121271F1818 epi121491F3030L epi121891G4036 epi130152KSP45 epi140102KSP45L epi150112F2222 epi150132B30 epi150132F3
OCR Text	epi-B20 Toroid Series epi-B30 Toroid Series epi-BH30 Toroid Series epi-BSP30 Toroid Series epi-B37F Toroid Series epi-B38 Toroid Series epi-BH38 Toroid Series epi-B44 Toroid Series epi-BH44 Toroid Series epi-BHC44 Toroid Series epi-B50 Toro...
Description	Contents Surface Mount Power Inductor
File Size	1,809.23K / 50 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard... Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Avago Technologies, Ltd.
Part No.	HMPP-389X HMPP-3890-BLK HMPP-3890-TR1 HMPP-3890-TR2 HMPP-3892-BLK HMPP-3892-TR1 HMPP-3892-TR2 HMPP-3895-BLK HMPP-3895-TR1 HMPP-3895-TR2 HMPP-389T-BLK HMPP-389T-TR1 HMPP-389T-TR2 DEMO-HMPP-38X0 DEMO-HMPP-389T HMPP-389T
OCR Text	...region. The epitaxial layer (or epi) diode starts as a wafer of heavily doped silicon (the P or N layer), onto which a thin I layer is grown. After the epitaxial growth, diffusion is used to add a heavily doped (N or P) layer on the top of ...
Description	HMPP-389T · MiniPak PIN switch diode HMPP-3895 · MiniPak PIN switch diode HMPP-3892 · MiniPak PIN switch diode HMPP-3890 · MiniPak PIN switch diode DEMO-HMPP-389T · Demonstration circuit board for HMPP-389T DEMO-HMPP-38X0 · Demonstration circuit board for the HMPP-3860 and HMPP-3890 MiniPak Surface Mount RF PIN Switch Diodes MiniPak表面贴装射频PIN开关二极管 MiniPak PIN switch diode MiniPak PIN开关二极管
File Size	152.35K / 11 Page	View it Online	Download Datasheet

				Intersema Sensoric SA
Part No.	MS7212-A MS7212
OCR Text	...ly voltage of Wheatstone bridge epi : Connection of epitaxial layer (membrane) Out- : Negative output Out+ : Positive output GND1 : Ground GND2 : Ground GND1 1 Vs+ epi Out+ Out- GND2 The European RoHS directive 2002/95/EC...
Description	PRESSURE SENSOR DIE (0-12 BAR) FOR HARSH ENVIRONMENT
File Size	253.18K / 4 Page	View it Online	Download Datasheet

For epi Found Datasheets File :: 899 Search Time::1.422ms
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