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				PANASONIC[Panasonic Semiconductor]
Part No.	2SA1022 2SC2295
OCR Text	...sification Rank hFE B 70 ~ 140 EB C 110 ~ 220 EC Marking Symbol 0 to 0.1 0.1 to 0.3 0.40.2 0.8 0.16 -0.06 +0.1 1 Transistor PC -- Ta 240 -30 Ta=25C 200 -25 2SA1022 IC -- VCE Collector to emitter saturation vo...
Description	Silicon PNP epitaxial planer type
File Size	37.20K / 2 Page	View it Online	Download Datasheet

				Leshan Radio Company, Ltd. 乐山无线电股份有限公
Part No.	2SA1037AKQLT1 2SA1037AKRLT1 2SA1037AKSLT1 2SA1037AK
OCR Text	...COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) M35-3/3
Description	General Purpose Transistors(PNP Silicon) 通用晶体管（民进党硅 Circular Connector; No. of Contacts:128; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:24; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:24-35 RoHS Compliant: No Circular Connector; No. of Contacts:128; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:24; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:24-35 RoHS Compliant: No
File Size	143.20K / 3 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text	...lassification Rank Marking hFE EB R26 50 to 100 FB R27 80 to 160 GB R28 125 to 250 2 2SC5011 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 PT - Total Power Dissipation - mW IC - Collector C...
Description	NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	50.99K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5012 2SC5012-T1 2SC5012-T2
OCR Text	...lassification Rank Marking hFE EB R36 50 to 100 FB R37 80 to 160 GB R38 125 to 250 2 2SC5012 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 PT - Total Power Disspation - mW IC - Collector Cu...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.43K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text	...lassification Rank Marking hFE EB R46 50 to 100 FB R47 80 to 160 GB R48 125 to 250 2 2SC5013 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 PT - Total Power Disspation - mW IC - Collector Cu...
Description	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	51.33K / 8 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1022
OCR Text	...ff Current V = 7V I Max 5mA EBO EB DC Current Gain h V = 3V, I = Min 1,500 CE C 3A FE Max 30,000 Collector to Emitter Saturation3A V (sat) I = Voltage Max 1.5 V CE C Base to Emitter Saturation Voltage V (sat) I = 3mA Max 2.0 V BE B Thermal ...
Description	Darlington Transistor(5A NPN)
File Size	273.90K / 8 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1023
OCR Text	...mitter Cutoff Current I Max 5mA EB EBO V = 7V DC Current Gain h V = 3V, I = 3A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 3A V (sat) I = Voltage Max 1.5 V CE C Base to Emitter Saturation Voltage V (sat) I = 5mA Max 2.0 V B...
Description	Darlington Transistor(5A NPN)
File Size	290.46K / 9 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1024
OCR Text	...itter Cutoff Current I Max 5 mA EB EBO V = 7V DC Current Gain h V = 3V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C Base to Emitter Saturation Voltage V (sat) I = 6mA Max 2.0V BE ...
Description	Darlington Transistor(8A NPN)
File Size	275.54K / 8 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1025
OCR Text	...itter Cutoff Current I Max 5 mA EB EBO V = 7V DC Current Gain h V = 3V, I = 5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C Base to Emitter Saturation Voltage V (sat) I = 10mA Max 2.0V BE...
Description	Darlington Transistor(8A NPN)
File Size	343.47K / 8 Page	View it Online	Download Datasheet

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