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For diode- Found Datasheets File :: 133022    Search Time::4.328ms    
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    FDMC8462

Fairchild Semiconductor
Part No. FDMC8462
OCR Text ... ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 13.5A VGS = 0V, IS = 1.7A (Note 2) (Note 2) 0.8 0.7 35 20 1.3 1.2 57 32 V ...
Description N-Channel Power Trench? MOSFET 40V, 20A, 5.8mΩ
N-Channel Power Trench㈢ MOSFET 40V, 20A, 5.8mヘ

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    THALER CORPORATION
Part No. VRE111C VRE111MA VRE111CA
OCR Text ...e is used to bias a 6.3v zener diode. the zener voltage is divided by the resistor network r1 and r2. this voltage is then applied to the noninverting input of the operational amplifier which amplifies the voltage to produce a 2.500v o...
Description Precision reference supply

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    UBA2017AP UBA2017AT UBA2017P UBA2017T

NXP Semiconductors
Part No. UBA2017AP UBA2017AT UBA2017P UBA2017T
OCR Text ...f-bridge ? integrated bootstrap diode for the high-side driver supply of the half-bridge ? independent non-overlap time ? fluorescent lamp controller features: ? linear dimming (uba2017a only) ? eol (end-of-life) detection (both symmetrica...
Description Dimmable HF-TL controller IC

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    Fairchild Semiconductor Corporation
Part No. FDMC510P
OCR Text ... ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -12 A VGS = 0 V, IS = -2 A IF = -12 A, di/dt = 100 A/s (Note 2) (Note 2) ...
Description
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    2SB1032 2SB1032K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1032 2SB1032K
OCR Text ...t Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C Symbol VCBO VCEO VEBO IC I C(peak) ID* 1 1 Rating -120 -120 -7 -10 -15 10 80 150 -55 t...
Description Silicon PNP Triple Diffused

File Size 35.68K  /  6 Page

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    Fairchild Semiconductor Corporation
Part No. FDMS86322
OCR Text ... ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.1 A VGS = 0 V, IS = 13 A (Note 2) (Note 2) 0.7 0.8 56 61 1.2 1.3 90 98 ...
Description N-Channel PowerTrench? MOSFET 80 V, 60 A, 7.65 m

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    SANYO
Part No. DL-3038-011
OCR Text Diode DL-3038-011 Index Guided AlGaInP Laser Diode Overview DL-3038-011 is index guided 635 nm (Typ.) AlGaInP laser diode. The low threshold current and short wavelength are achieved by a strained multiple quantum well active layer....
Description Red Laser Diode Index Guided AlGaInP Laser Diode

File Size 43.42K  /  3 Page

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    2SB955 2SB955K

HITACHI[Hitachi Semiconductor]
Part No. 2SB955 2SB955K
OCR Text ...t Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Notes: 1. Value at TC = 25C 2. PW 1 ms 1 shot Symbol VCBO VCEO VEBO IC I C(peak) ID* 1 2 Rating -120 -120 -7 -10...
Description Silicon PNP Triple Diffused

File Size 34.71K  /  6 Page

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    U74LVX4053 U74LVX4053G-P16-R

Unisonic Technologies
Part No. U74LVX4053 U74LVX4053G-P16-R
OCR Text ...uit that avoids the need for a diode on the plus side (forword side from the input to the v cc ). as a result, for example, 5v signals can be permitted on the in puts even when the power supply voltage to the circuits is off. as a re su...
Description Triple 2-Channel Analog Multiplexer/Demultiplexer

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    2SC5060 2SC5060TV2M

Rohm CO.,LTD.
Part No. 2SC5060 2SC5060TV2M
OCR Text diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitte...
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power transistor (9010V, 3A)
Power transistor (9010V/ 3A)
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits

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