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				Electronic Theatre Controls, Inc. Broadcom Corporation. ETC
Part No.	BCM5221
OCR Text	...ort cost * Straight-through or cross-over cables accommodated independent of installation * Advanced cable diagnostic features to enable remote monitoring and debug of cabling infrastructure * Resistance to CESD to reduce product destructi...
Description	10/100BASE TX SINGLE CHANNEL SIGNI PHY TRANSCEIVER
File Size	199.07K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	CD4043BMS CD4043BMSH CD4044BMS CD4044BMSH FN3311 CD4044
OCR Text	...ption CD4043BMS types are quad cross-coupled 3-state CMOS NOR latches and the CD4044BMS types are quad cross-coupled 3state CMOS NAND latches. Each latch has a separate Q output and individual SET and RESET inputs. The Q outputs are contro...
Description	Single 100Mbps Digital Isolator with Enable 8-SOIC -40 to 125 CMOS Quad Clocked “DLatch R/S Latches, Tri-State, Quad, Rad-Hard, CMOS, Logic CMOS Quad Clocked “D” Latch From old datasheet system CMOS Quad 3 State R/S Latches CMOS Quad Clocked D Latch CMOS Quad Clocked “D Latch
File Size	108.99K / 10 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	HCC4043 HCC4043B HCC4043BC1 HCC4043BEY HCC4043BF HCC4043BM1 HCF4043B HCF4043BC1 HCF4043BEY HCF4043BF HCF4043BM1 HCC_HCF4044B HCC_HCF4043B HCF4044B HCF4044BM1 HCC4044B HCC4044BC1 HCC4044BEY HCC4044BF HCC4044BM1 HCF4044BC1 HCF4044BEY HCF4044BF
OCR Text	...the HCC/HCF4044B types are quad cross-coupled 3state COS/MOS NAND latches. Each latch has a separate Q output and individual SET and RESET i...over recommended operating conditions) Symbol IL Test Conditions VO \|I O \| V D D T L o w* (V) (A) (...
Description	Dual Line Driver 14-SOIC 0 to 70 Dual Line Driver 14-SO 0 to 70 QUAD 3-STATE R-S LATCHES MICRMICROPOWER PHASE-LOCKED LOOP _
File Size	301.44K / 13 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	...f-voltage Rise T ime Fall T ime cross-over Time Test Con ditions V DD = 80 V I D =16 A R G = 4.7 VGS = 10 V Min. Typ. 11 12 25 Max. 15 17 35 Unit ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Sourc...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	...Off-voltage Rise Time Fall Time cross-over Time Test Conditions V DD = 80 V I D = 16 A R G = 4.7 V GS = 10 V Min. Typ. 11 12 25 Max. 15 17 35 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Sour...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
Part No.	MAX2320 MAX2320EUP MAX2321 MAX2321EUP MAX2322 MAX2322EUP MAX2324 MAX2324EUP MAX2325 MAX2326 MAX2326EUP MAX2327 MAX2327EUP MAX2329 MAX2323
OCR Text	...to minimize intermodulation and cross-modulation in the presence of large interfering signals. In low-gain mode, the LNA is bypassed to prov...Over Temperature Relative to +25C Noise Figure (Note 5) Input Third-Order Intercept (Notes 5, 6) Inp...
Description	Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs Adjustable / High-Linearity / SiGe Dual-Band LNA/Mixer ICs Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs
File Size	521.05K / 28 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STW8NB100
OCR Text	...Off-voltage Rise Time Fall Time cross-over Time Test Conditions VDD = 800V, ID = 7 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 32 32 40 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Par...
Description	N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
File Size	253.36K / 9 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics
Part No.	STW8NB100
OCR Text	...Off-voltage Rise Time Fall Time cross-over Time Test Conditions V DD = 800 V R G = 4.7 ID = 7 A V GS = 10 V Min. Typ. 32 32 40 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Cu...
Description	N - CHANNEL 1000V - 1.2W - 8A - TO-247, PowerMESH MOSFET
File Size	55.84K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TLP3064
OCR Text	...INAL 1 TERMINAL 2 (ZC : Zero-cross Circuit) 1 2002-09-25 TLP3064 Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 25C) LED Peak forward current (100s pulse, 100pps) Reverse voltage Juncti...
Description	TOSHIBA Photocoupler GaAs Ired & Photo−Triac TOSHIBA Photocoupler GaAs Ired & Photo-Triac
File Size	164.65K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TLP801A TLP801AF
OCR Text	...nter of sensor 8min 6.85 5.5max Cross section between A and A' 8 2004-02-12 TLP801A(F) RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAC * The information contai...
Description	INFRARED LED PHOTOTRANSISTOR
File Size	244.93K / 9 Page	View it Online	Download Datasheet

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