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RN5002 MMBT404A CM108B BM851 MAX1711 FGA30N60 A1204 24LC65
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For cont.assy Found Datasheets File :: 54    Search Time::0.734ms    
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    PTF080101S

Infineon Technologies AG
Part No. PTF080101S
OCR Text ...ptf080101s rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 150 ma, p out = 10 w...assy-dtl 080101s_assy rf_in rf_out r9 c6 c5 c11 c12 c10 c4 r11 c9 c14 r4 r5 r7 c13 qq1 q1 c8 v dd r8...
Description Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

File Size 164.70K  /  9 Page

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    Sony
Part No. KV-29LS60E
OCR Text ...c5103 3 7 df phocus phase m pin cont op. amp ic5104 1 4 rot - rot+ 5 3 6 op. amp ic5301 7 6 comparator ic5302 5 6 2 dynamic convergence ic52...assy v- dy- h dy h- dy+ h- dy- 6 5 11 1 2 4 7 9 8 hv 12 +200v t8800 f sc 13 v + h - h + h + h - 1 3 ...
Description KV-29LS60E

File Size 11,052.13K  /  47 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. PTF080451E PTF080451
OCR Text ...F080451 Typical Performance (cont.) Intermodulation Distortion vs. Output Power VDD (as measured in a broadband circuit) = 28 V, IDQ ...assy 7 of 9 + C14 C16 10 35V 10 35V 2004-06-24 PTF080451 Ordering Informatio...
Description LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
LDMOS RF Power Field Effect Transistor 45 W 869-960 MHz
LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

File Size 154.66K  /  9 Page

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    http://
INFINEON[Infineon Technologies AG]
Part No. PTF211802A PTF211802E PTF211802
OCR Text ...F211802 Typical Performance (cont.) Intermodulation Distortion vs. Output Power for selected currents VDD = 28 V, f = 2140 MHz, tone ...assy Reference Circuit1 (not to scale) Component C1, C2, C3 C4, C10 C5, C11 C6, C9 C7 C8 C12, C18...
Description LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz
LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

File Size 165.14K  /  8 Page

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    F2520

List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. F2520
OCR Text cont'd) KEY NO. 4 7 8 9 11 12 13 14 15 16 17 18 19 20 22 24 26 27 28 29 30 31 32 34 35 36 37 38 39 40 42 43 45 46 48 50 51 52 53 54 PART NU...Assy. Screw (eccentric, torque 50-60 In. Lbs.) Squirrel Cage Fan Screw #10-24 x 3/8" long (torque 30...
Description F2520

File Size 53.12K  /  4 Page

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    PTFA082201E09 PTFA082201F

Infineon Technologies AG
Part No. PTFA082201E09 PTFA082201F
OCR Text ...ribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1950 mA, POUT = 220 W PEP...assy Reference circuit assembly diagram (not to scale)* Component C1, C2, C3 C4 C5, C15, C21 ...
Description Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ??894 MHz
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ?894 MHz

File Size 342.39K  /  10 Page

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    PTFA080551E PTFA080551F

Infineon Technologies AG
Part No. PTFA080551E PTFA080551F
OCR Text ...ribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 600 mA, POUT = 55 W PEP, ...assy- 06-03-14 _ Reference circuit assembly diagram (not to scale)* Component C1, C2, C3 C4 C...
Description Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 鈥?960 MHz

File Size 225.55K  /  11 Page

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    PTFA180701E PTFA180701F

Infineon Technologies AG
Part No. PTFA180701E PTFA180701F
OCR Text ...TFA180701F RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, ...assy Reference circuit assembly diagram* (not to scale) Component C1, C2, C3 C4 C5 C6 C7, C9 C8, ...
Description Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz

File Size 359.94K  /  11 Page

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    Infineon Technologies A...
Part No. PTFA092201FV4R0XTMA1 PTFA092201E PTFA092201EF PTFA092201EV4R0 PTFA092201EV4R0XTMA1 PTFA092201EV4R250 PTFA092201EV4R250XTMA1 PTFA092201FV4R250 PTFA092201FV4R250XTMA1
OCR Text ...fficiency typical performance (cont.) cw (high gain tuned) gain & efficiency vs. output power v dd = 30 v, i dq = 2000 ma, ? = 960 mhz 15...assy rf_ in rf_out a082201in_02 a092201in_02 ro4350_.030 a082201out_02 a092201out_02 ro4350_.030 lm ...
Description Thermally-Enhanced High Power RF LDMOS FETs

File Size 7,329.65K  /  11 Page

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    PTFA091201HL PTFA091201GL

Infineon Technologies AG
Part No. PTFA091201HL PTFA091201GL
OCR Text ...ribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 110 W PEP,...assy _ Reference circuit assembly diagram (not to scale)* Component C1, C2, C3 C4 C5, C7 C17,...
Description Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ??960 MHz
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ?960 MHz

File Size 279.48K  /  10 Page

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For cont.assy Found Datasheets File :: 54    Search Time::0.734ms    
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