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				FAIRCHILD[Fairchild Semiconductor]
Part No.	FAN5601_05 FAN5601
OCR Text	...IN Pin Function Description bucket Capacitor Positive Connection bucket Capacitor Negative Connection Enable Pin Ground Regulated Output Voltage. Bypass this pin with 10F ceramic low ESR capacitor. Supply Voltage Input 2 FAN5601 Rev....
Description	Regulated Step-Down Charge Pump DC/DC Converter
File Size	814.72K / 15 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC10 K4S643232C-TC70 K4S643232C-TC55 K4S643232C-TC80 K4S643232C-TC60 K4S643232C-TL60 K4S643232C-TL70 V62C5181024LL-70P K4S643232C-TL10
OCR Text	...and it will be distinguished by bucket code "NV". From the next generation, tRDL will be only 2CLK for every clock frequency. 6. A new command should be issued after self refersh exit followed by tRFC. AC CHARACTERISTICS (AC operating co...
Description	ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85 Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85 Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
File Size	1,165.47K / 43 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. http://
Part No.	K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80 DSK4S161622D
OCR Text	... part which is distinguished by bucket code "J". From the next generation, tRDL will be only 2CLK for every clock frequency. AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS Latency=3 CAS Latency=2 CLK t...
Description	1M x 16 SDRAM 100万16内存
File Size	685.66K / 43 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S161622D-TC/L10 K4S161622D-TC/L55 K4S161622D-TC/L60 K4S161622D-TC/L70 K4S161622D-TC/L80
OCR Text	... part which is distinguished by bucket code "J". From the next generation, tRDL will be only 2CLK for every clock frequency. AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CAS Latency=3 CAS Latency=2 CLK t...
Description	512K x 16Bit x 2 Banks Synchronous DRAM 12k × 16 × 2银行同步DRAM
File Size	1,088.41K / 41 Page	View it Online	Download Datasheet

				Mindspeed Technologies
Part No.	MXT3010
OCR Text	... General Purpose - 0040 196 Bit bucket register 197 General Purpose registers 198 Host Communication registers 199 External State Signals (ESS) register 200 Mode Configuration register 201 Fast Memory Bit Swap register (R42w[8]=0) 203 Speci...
Description	Reference Manual
File Size	2,204.08K / 456 Page	View it Online	Download Datasheet

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