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For breakdown Found Datasheets File :: 95198    Search Time::1.782ms    
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    Micross Components
Part No. ICE4N73
OCR Text ...stics v (br)dss drain to source breakdown voltage 730 770 - v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 2.1 3 3.9 v ds = v gs , i d = 250a i dss zero gate voltage drain current - 0.5 5 a v ds = 730v, v gs = 0v, t j = 25c ...
Description N-Channel Enhancement Mode MOSFET

File Size 563.29K  /  4 Page

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    2SD1148

姘哥??介????
永盛国际集团
WINGS[Wing Shing Computer Components]
Part No. 2SD1148
OCR Text ... Characteristic Collector Base breakdown Voltage Collector Emitter breakdown Voltage Emitter Base breakdown Voltage Collector Cutoff Current Emitter Cutoff Current *DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage S...
Description NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

File Size 47.53K  /  1 Page

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    Micross Components
Part No. ICE4N73FP
OCR Text ...stics v (br)dss drain to source breakdown voltage 730 770 - v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 2.1 3 3.9 v ds = v gs , i d = 250a i dss zero gate voltage drain current - 0.5 5 a v ds = 730v, v gs = 0v, t j = 25c ...
Description N-Channel Enhancement Mode MOSFET

File Size 550.40K  /  4 Page

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    Micross Components
Part No. ICE4N73D
OCR Text ...stics v (br)dss drain to source breakdown voltage 730 770 - v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 2.1 3 3.9 v ds = v gs , i d = 250a i dss zero gate voltage drain current - 0.5 5 a v ds = 730v, v gs = 0v, t j = 25c ...
Description N-Channel Enhancement Mode MOSFET

File Size 563.01K  /  4 Page

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    Micross Components
Part No. ICE4N70
OCR Text ...stics v (br)dss drain to source breakdown voltage 700 730 - v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 2.1 3 3.9 v ds = v gs , i d = 250a i dss zero gate voltage drain current - 0.1 1 a v ds = 700v, v gs = 0v, t j = 25c ...
Description N-Channel Enhancement Mode MOSFET

File Size 754.63K  /  4 Page

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    2SD467

HITACHI[Hitachi Semiconductor]
Part No. 2SD467
OCR Text ... = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 -- 1 Typ -- -- -- -- -- 0.19 0.76 280 12 Max -- -- -- 1.0 240 0.5 1.0 -- -- Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = ...
Description Silicon NPN Epitaxial

File Size 29.20K  /  6 Page

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    2SD468

Hitachi Semiconductor
Part No. 2SD468
OCR Text ... = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 -- 1 Typ -- -- -- -- -- 0.2 0.79 190 22 Max -- -- -- 1.0 240 0.5 1.0 -- -- Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 1...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 29.49K  /  6 Page

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    2SD476 2SD476A 2SD476AK 2SD476K

HITACHI[Hitachi Semiconductor]
Part No. 2SD476 2SD476A 2SD476AK 2SD476K
OCR Text ...SD476(K) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO Min 70 50 5 -- 60 35 -- -- -- -- -- -- Typ -- -- -- ...
Description Silicon NPN Triple Diffused

File Size 32.08K  /  5 Page

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    Icemos Technology
Part No. ICE4N70
OCR Text ...haracteristics drain - source breakdown voltage v (br)dss v gs =0 v, i d =250a 700 730 - v gate threshold voltage v gs(th) v ds = v gs , i d =250a 2.1 3 3.9 zero gate voltage drain current i dss v ds =7...
Description N-Channel Enhancement Mode MOSFET

File Size 552.75K  /  9 Page

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    2SD655

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SD655
OCR Text ... = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 15 5 -- -- -- 250 -- Typ -- -- -- -- -- 0.15 -- 250 Max -- -- -- 1.0 1.0 0.5 1200 -- MHz Unit V V V A V V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 1...
Description Silicon NPN Epitaxial npn型硅外延

File Size 28.39K  /  6 Page

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