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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC449
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| OCR Text |
...E THICKNESS IS .004" 3. TYPICAL bond PAD IS .004" SQUARE. 4. TYPICAL bond SPACING IS .006" CENTER TO CENTER. 5. bond PAD METALIZATION: GOLD 6. BACKSIDE METALIZATION: GOLD 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED ... |
| Description |
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT
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| File Size |
221.78K /
6 Page |
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC448
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| OCR Text |
...E THICKNESS IS .004" 3. TYPICAL bond PAD IS .004" SQUARE. 4. TYPICAL bond SPACING IS .006" CENTER TO CENTER. 5. bond PAD METALIZATION: GOLD 6. BACKSIDE METALIZATION: GOLD 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR UNLABELED ... |
| Description |
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT
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| File Size |
222.03K /
6 Page |
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it Online |
Download Datasheet |
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC405
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| OCR Text |
...4 (0.100) BACKSIDE IS GROUND 4. bond PADS ARE 0.004 (0.100) SQUARE 5. bond PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. bond PAD METALLIZATION: GOLD
192 C/W -65 to +150 C -55 to +85 C
Outline Drawing
For p... |
| Description |
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz
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| File Size |
210.47K /
6 Page |
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it Online |
Download Datasheet |
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Hittite Microwave Corpo...
HITTITE[Hittite Microwave Corporation]
美国讯泰微波有限公司上海代表
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| Part No. |
HMC362
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| OCR Text |
...4 (0.100) BACKSIDE IS GROUND 4. bond PADS ARE 0.004 (0.100) SQUARE 5. bond PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. bond PAD METALLIZATION: GOLD
3 - 10
For price, delivery, and to place orders, please con... |
| Description |
GaAs HBT MMIC DIVIDE-BY-4, DC - 11.0 GHz
600,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
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| File Size |
184.38K /
6 Page |
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it Online |
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美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC344
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| OCR Text |
...THICKNESS IS 0.004". 3. TYPICAL bond PAD IS 0.004" SQUARE. 4. TYPICAL bond PAD SPACING IS 0.006" CENTER TO CENTER. 5. bond PAD METALLIZATION: GOLD. 6. BACKSIDE METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. NO CONNECTION REQUIRED FOR ... |
| Description |
GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz
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| File Size |
163.87K /
6 Page |
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it Online |
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC342 -HMC342
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| OCR Text |
...E THICKNESS IS .004" 3. TYPICAL bond IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. bond PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED bond PADS.
Absolute Maximum Ratings
Drain Bias Vo... |
| Description |
GaAs MMIC LOW NOISE AMPLIFIER/ 13 - 25 GHz
GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz
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| File Size |
185.16K /
6 Page |
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it Online |
Download Datasheet |
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HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC341
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| OCR Text |
...E THICKNESS IS .004" 3. TYPICAL bond IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. bond PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED bond PADS.
Absolute Maximum Ratings
Drain Bias Vo... |
| Description |
GaAs MMIC LOW NOISE AMPLIFIER/ 24 - 30 GHz
GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz
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| File Size |
181.84K /
6 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPDA200V
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| OCR Text |
... PHEMT WITH SOURCE VIAS
GATE bond PAD
DRAIN bond PAD
DIE SIZE: 15.6X13.2 mils (395x335 m) DIE THICKNESS: 3.9 mils (100 m) bondING PADS: 3.1X3.1 mils (80x80 m)
*
DESCRIPTION AND APPLICATIONS The FPDA200V is an Aluminum Gallium... |
| Description |
HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
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| File Size |
57.15K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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