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				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C
OCR Text	banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 May. 2003 K4S560832D Revision History Revision 0.0 (Jan. , 2002) - First...
Description	256Mbit SDRAM 8M x 8bit x 4 banks Synchronous DRAM LVTTL
File Size	116.54K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	... CMOS SDRAM 16M x 4Bit x 4 banks / 8M x 8Bit x 4 banks / 4M x 16Bit x 4 banks SDRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with address key programs ...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text	... CMOS SDRAM 16M x 4Bit x 4 banks / 8M x 8Bit x 4 banks / 4M x 16Bit x 4 banks SDRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with address key programs ...
Description	256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	196.59K / 14 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text	banks Synchronous DRAM LVTTL Revision 0.1 Oct. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Oct.1999 K4S640832C Revision History Revision 0.1 (Oct. 02, 1999) * Chan...
Description	64Mbit SDRAM 2M x 8Bit x 4 banks Synchronous DRAM LVTTL
File Size	128.76K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text	banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May 1999 K4S640832D 2M x 8Bit x 4 banks Synchronous DRAM FEATURES * * *...
Description	64Mbit SDRAM 2M x 8Bit x 4 banks Synchronous DRAM LVTTL
File Size	127.15K / 10 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S64BAMD-10 MH16S64BAMD-7 MH16S64BAMD-8 MH16S64BAM
OCR Text	...gh at a precharge command, both banks are precharged. Bank Address:BA0,1 is not simply BA.BA specifies the bank to which a command is applied.BA0,1 must be set with ACT,PRE,READ,WRITE commands CKE0 Input /S (/S0-3) /RAS,/CAS,/WE ...
Description	1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
File Size	588.19K / 55 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S64BAMD-6 B99029
OCR Text	...gh at a precharge command, both banks are precharged. Bank Address:BA0,1 is specifies the four bank to which a command is applied.BA must be set with ACT ,PRE ,READ ,WRITE commands CKE0,1 Input /S0-3 /RAS,/CAS,/W Input Input ...
Description	From old datasheet system 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
File Size	576.78K / 40 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S64DAMD-6 MH16S64DAMD-7 MH16S64DAMD-8 B99056
OCR Text	...esses on this assembly # Module banks on this assembly Data Width of this assembly... ... Data Width continuation Voltage interface standard of this assembly SDRAM Cycletime at Max. Supported CAS Latency (CL). -6 -7,-8 -6 -7,-8 SPD enrt...
Description	From old datasheet system 1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM
File Size	710.53K / 55 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S72BAMD-10 MH16S72BAMD-7 MH16S72BAMD-8 B98041_A
OCR Text	...gh at a precharge command, both banks are precharged. Bank Address:BA0,1 is not simply BA.BA specifies the bank to which a command is applied.BA0,1 must be set with ACT,PRE,READ,WRITE commands CKE0 Input /S (/S0-3) /RAS,/CAS,/WE ...
Description	From old datasheet system 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
File Size	589.26K / 55 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH16S72BAMD-6 B99030
OCR Text	...gh at a precharge command, both banks are precharged. Bank Address:BA0,1 is specifies the four bank to which a command is applied.BA must be set with ACT ,PRE ,READ ,WRITE commands CKE0,1 Input /S0-3 /RAS,/CAS,/W Input Input ...
Description	From old datasheet system 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
File Size	579.21K / 40 Page	View it Online	Download Datasheet

For banks Found Datasheets File :: 11425 Search Time::9.156ms
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