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				HYNIX[Hynix Semiconductor]
Part No.	HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP532S646-C4 HYMP564S64P8-E3 HYMP112S64M8-C4 HYMP112S64M8-E3 HYMP112S64MP8-C4 HYMP112S64MP8-E3 HYMP532S64P6-C4 HYMP532S64P6-E3 HYMP564S646-C4 HYMP564S646-E3 HYMP564S64P6-C4 HYMP564S64P6-E3 HYMP564S64P8-C4 HYMP532S646 HYMP532S64P6 HYMP564S646 HYMP564S648 HYMP564S64P8 HYMP112S64MP8 HYMP112S64M8
OCR Text	...toprecharge is selected and BA0-ban defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle., AP is used in conjunction with BA0-ban to control which bank(s) to precharge. If AP is high, ...
Description	200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. DDR2 SDRAM - SO DIMM 256MB DDR2 SDRAM - SO DIMM 512MB DDR2 SDRAM - SO DIMM 1GB
File Size	761.19K / 23 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HMT451S6AFR8C
OCR Text	...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. duri ng a precharge command cycle, ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is high...
Description	DDR3 SDRAM
File Size	1,056.16K / 55 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HMT451S6AFR8A
OCR Text	...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. duri ng a precharge command cycle, ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is high...
Description	DDR3L SDRAM
File Size	1,079.90K / 56 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5R256HCXXX HY5R256HC745
OCR Text	...mbit direct rdram block diagram ban k 31 dqa8 .. dqa0 1 : 8 d e m u x 8 : 1 m u x w r i t e b u f f e r 1 : 8 d e m u x w r i t e b u f f e r 8 : 1 m u x ban k 30 ban k 29 bank 1 8 bank 1 7 ban k 16 ban k 15 ban k 14 ban...
Description	RDRAM
File Size	2,710.80K / 64 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor]
Part No.	HYMP512R72L HYMP512R72X HYMP512R724-C4 HYMP512R724-C5 HYMP512R724-E3 HYMP512R724-E4 HYMP512R724-Y5 HYMP512R724-Y6 HYMP512R72L4-C4 HYMP512R72L4-C5 HYMP512R72L4-E3 HYMP512R72L4-E4 HYMP512R72L4-Y5 HYMP512R72L4-Y6
OCR Text	...toprecharge is selected and BA0-ban defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle., AP is used in conjunction with BA0-ban to control which bank(s) to precharge. If AP is high, ...
Description	DDR2 SDRAM - Registered DIMM 1GB DDR2 SDRAM Registered DIMM
File Size	226.14K / 18 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 M470T6554CZ0-CE7 M470T6554CZ0-CLCC M470T6554CZ0-CLD5 M470T6554CZ0-CLE6 M470T6554CZ0-CLE7 M470T6554CZ3-CCC M470T6554CZ3-CD5 M470T6554CZ3-CE6 M470T6554CZ3-CE7 M470T6554CZ3-CLCC M470T6554CZ3-CLD5 M470T6554CZ3-CLE6 M470T6554CZ3-CLE7 M470T3354CZX M470T2953CZ0-CCC M470T2953CZ0-CD5 M470T2953CZ0-CE6 M470T2953CZ0-CE7 M470T2953CZ0-CLCC M470T2953CZ0-CLD5 M470T2953CZ0-CLE6 M470T2953CZ0-CLE7 M470T2953CZ3-CCC M470T2953CZ3-CD5 M470T2953CZ3-CE6 M470T2953CZ3-CE7 M470T2953CZ3-CLCC M470T2953CZ3-CLD5 M470T2953CZ3-CLE6 M470T2953CZ3-CLE7 M470T3354CZ0-CCC M470T3354CZ0-CD5 M470T3354CZ0-CE6 M470T3354CZ0-CE7 M470T3354CZ0-CLCC M470T3354CZ0-CLD5 M470T3354CZ0-CLE6 M470T3354CZ0-CLE7 M470T3354CZ3 M470T3354CZ3-CCC M470T3354CZ3-CD5 M470T3354CZ3-CE6 M470T3354CZ3-CE7 M470T3354CZ3-CLCC M470T3354CZ3-CLD5 M470T3354CZ3-CLE6 M470T3354CZ3-CLE7
OCR Text	...toprecharge is selected and BA0-ban defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0-ban to control which bank(s) to precharge. If AP is high, a...
Description	40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC 40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC PATCHCORD SQ SCKT-ALLIG CLIP RED
File Size	325.88K / 18 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HMT325S6BFR6C-H9
OCR Text	...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. duri ng a precharge command cycle, ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is hig...
Description	256M X 64 DDR DRAM MODULE, DMA204
File Size	474.71K / 54 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	M470T6554CZ0 M470T6554CZ0-CC M470T6554CZ0-CD6 M470T6554CZ0-D5 M470T6554CZ0-E6 M470T3354CZ0-E6 M470T2953CZ0 M470T2953CZ0-CC M470T2953CZ0-CD6 M470T2953CZ0-D5 M470T2953CZ0-E6 M470T3354CZ0-CC M470T3354CZ0-CD6 M470T3354CZ0-D5
OCR Text	...toprecharge is selected and BA0-ban defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0-ban to control which bank(s) to precharge. If AP is high, a...
Description	DDR2 Unbuffered SODIMM
File Size	267.92K / 20 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HMT41GS6MFR8C-RD
OCR Text	...toprecharge is selected and ba0-ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. duri ng a precharge command cycle, ap is used in conjunction with ba0-ban to control which bank(s) to precharge. if ap is hig...
Description	DDR DRAM MODULE, DMA204
File Size	345.31K / 48 Page	View it Online	Download Datasheet

For ban Found Datasheets File :: 2897 Search Time::1.391ms
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