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Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
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| Part No. |
AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F010A-120EE AM28F010A-120EEB AM28F010A-120EIB AM28F010A-120FC AM28F010A-120FE AM28F010A-120FI AM28F010A-120FIB AM28F010A-120JC AM28F010A-120JCB AM28F010A-120JE AM28F010A-120JEB AM28F010A-70EE AM28F010A-70EC AM28F010A-90EC AM28F010A-90EE AM28F010A-70FC AM28F010A-90FC AM28F010A-90FCB AM28F010A-120FCB AM28F010A-150FC AM28F010A-150FCB AM28F010A-200FC AM28F010A-200FCB AM28F010A-70FCB AM28F010A-90ECB AM28F010A-200FEB AM28F010A-70FE AM28F010A-70FEB AM28F010A-90FEB AM28F010A-70ECB AM28F010A-200EC AM28F010A-90JEB AM28F010A-90JCB AM28F010A-90PCB AM28F010A-70JCB AM28F010A-200FIB AM28F010A-200JC AM28F010A-150JCB AM28F010A-150EIB AM28F010A-70JEB AM28F010A-70EIB AM28F010A-70JIB AM28F010A-90PIB AM28F010A-90JI AM28F010A-90JIB AM28F010A-150EE AM28F010A-150FI AM28F010A-200EEB
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| Description |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
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| File Size |
242.75K /
35 Page |
 View
it Online |
Download Datasheet
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Advanced Micro Devices, Inc.
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| Part No. |
AM29F010B-90JI AM29F010B-120EC AM29F010B-120EI AM29F010B-55PI
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| Description |
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 5V PROM, 120 ns, PDSO32
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
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| File Size |
586.48K /
34 Page |
View
it Online |
Download Datasheet |
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Advanced Linear Devices, Inc.
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| Part No. |
AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120WCC AM29LV017D-90FC AM29LV017D-90EI AM29LV017D-120EI
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| Description |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes
x8 Flash EEPROM
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
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| File Size |
640.33K /
44 Page |
View
it Online |
Download Datasheet |
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| Part: AM28F010A-120JI |
| Maker: AMD |
| Pack: PLCC32 |
| Stock: Reserved |
| Unit price
for : |
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50: $1.11 |
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100: $1.05 |
| 1000:
$1.00 |
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