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  90.0m Datasheet PDF File

For 90.0m Found Datasheets File :: 3696    Search Time::3.25ms    
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    2SA2025

SANYO[Sanyo Semicon Device]
Part No. 2SA2025
OCR Text ...tions Ratings min -15 -12 -5 30 90 10 typ max Unit V V V ns ns ns Switching Time Test Circuit PW=20s D.C.1% INPUT VR 50 1k + 220F VBE=5V...0m 100 7 5 3 2 era tio n 10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.01 T...
Description PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA

SANYO[Sanyo Semicon Device]
SANYO SEMICONDUCTOR CO LTD
Sanyo Electric Co.,Ltd.
Part No. 2SA2039 2SC5706 2SC5706TP-FA 2SA2039TP-FA
OCR Text ...5)20 200 (360)400 (24)15 (--115)90 (--195)135 (--255)160 (--430)240 (-)0.89 (--)1.2 Ratings min typ max (--)1 (--)1 560 MHz pF mV mV V V V V...0m A --30m --20mA --40mA --10mA A 2 10mA --5mA 5mA 1 --1 0 0 --0.4 --0....
Description Low-Power, Single/Dual-Voltage &#181;P Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2043 2SC5709 2SA2043TP-FA 2SC5709TP-FA
OCR Text ...0 (120)180 (14)25 200 (220)280 (90)50 (--110)120 (-)0.85 (--170)180 (--)1.2 (--160)180 (--240)280 Ratings min typ max (--)0.1 (--)0.1 560 MH...0m m A --50mA 6 A 10mA IB=0 --0.5 IT00170 0 0 0.1 0.2 0.3 0.4 IB=0 0.5 ...
Description CABLE ASSEMBLY; UHF MALE TO UHF MALE; 50 OHM, RG58C/U COAX 直流/直流转换器应
NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 10A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 10A I(C) | TO-251VAR

File Size 37.35K  /  5 Page

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...Ta=25C) 2SC5071 Unit A A 19.90.3 V V V MHz pF 4.0 a b o3.20.1 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 ...0m A 60 0m A 10 V B E( sat) 1 -55C (Case Temp) Collector Current I C (A) 8 400m A 8 ...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...ng Time Test Circuit 44 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC ) ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...ng Time Test Circuit 50 VDS 90% 0 25 50 75 100 125 150 175 TC, Case Temperature (C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 (Z thJC ) D = 0...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ... Test Circuit 40 VDS 20 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 1 Fig 10b. Switching Time Waveforms Thermal Respo...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ... Test Circuit 40 VDS 20 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 1 Fig 10b. Switching Time Waveforms Thermal Respo...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...irf.com IRF3704/3704S/3704L 90 VDS RD LIMITED BY PACKAGE 75 VGS RG D.U.T. + I D , Drain Current (A) -VDD 60 10V 45 Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit VDS ...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...mperature Range Max. 30 20 90 57 360 120 3.1 0.96 -55 to + 150 Units V V A W W mW/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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