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  63.0m Datasheet PDF File

For 63.0m Found Datasheets File :: 603    Search Time::1.61ms    
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    2SB1181 2SB1260 2SB1241

ROHM[Rohm]
Part No. 2SB1181 2SB1260 2SB1241
OCR Text ...mitter ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SB1241 6.80.2 2.50.2 0.65Max. 1.0 0.50.1 (1) (2) (3) ...0m =1 PW PW 200 100 50 s 0 =1 ms m 00 =1 PW 00 DC m s s -0.2 -0.1 -0...
Description Power Transistor

File Size 78.57K  /  3 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ...AJ ( S type) JEDEC DPAK-2 SC-63 SC-64 -- 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for informatio...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SB1572 2SB1572HY

NEC, Corp.
NEC[NEC]
Part No. 2SB1572 2SB1572HY
OCR Text ...00 UNIT nA nA - 80 100 -0.63 200 -0.685 -0.2 -0.3 -0.89 160 45 155 510 35 400 -0.73 -0.4 -0.6 -1.2 - V V V V MHz pF ns ns ns Bas...0m A -3 20 m - -10 -5 -2 -1 -0.5 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = -2 V ...
Description TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 3A条一(c)|43
PNP SILICON EPITAXIAL TRANSISTOR

File Size 42.11K  /  4 Page

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    BYW29F200 BYW29200 BYW29 BYW29-200 BYW29F-200 BYW29F

意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. BYW29F200 BYW29200 BYW29 BYW29-200 BYW29F-200 BYW29F
OCR Text ...0.067 0.195 0.205 0.394 0.409 0.63 typ. 1.125 1.205 0.626 0.646 0.354 0.366 0.118 0.126 L6 L2 L3 L7 F1 F G D E A B D E F ...0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics a...
Description HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

File Size 71.16K  /  6 Page

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    BYW80200 BYW80-200 BYW80F-200 BYW80 BYW80F200

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
Part No. BYW80200 BYW80-200 BYW80F-200 BYW80 BYW80F200
OCR Text ...0.067 0.195 0.205 0.394 0.409 0.63 typ. 1.125 1.205 0.626 0.646 0.354 0.366 0.118 0.126 Cooling method : C Marking : Type number Weight :...0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics a...
Description CONN MINI D RCPT 36POS R/A 4-40 高效快速恢复整流二极管
Very low quiescent BiCMOS voltage regulator 高效快速恢复整流二极管
PC Board Connector; Number of Contacts:36; Pitch Spacing:0.05"; Number of Rows:1; Mounting Type:PCB Right Angle Thru Hole; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:No 高效快速恢复整流二极管
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

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    STA335A

Sanken electric
Part No. STA335A
OCR Text ... 100 VCE (V) Ta (C) 63
Description Power Transistor Array

File Size 21.60K  /  1 Page

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    FDV304 FDV304P

FAIRCHILD[Fairchild Semiconductor]
Part No. FDV304 FDV304P
OCR Text ...Transfer Capacitance (Note) 63 34 10 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay ...0m s SINGLE PULSE R JA =357 C/W TA = 25C 3 0.1 0.05 0.02 0.01 0.1 VGS = -2.7V SINGLE ...
Description Digital FET/ P-Channel
Digital FET, P-Channel

File Size 63.13K  /  4 Page

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    HV9906DB3

Supertex Inc
SUTEX[Supertex, Inc]
Supertex Inc
Part No. HV9906DB3
OCR Text ...HD) Efficiency 80 to 135VAC, 47-63 Hz or 100 to 200VDC 500mA 10% (700mA max.) 10V max. >0.95 <15% 60% (Vo=10V, Io=0.5A, Vin=100VAC) Bo...0M Ohm, 1% 90.9K ohm, 1% 100K ohm, 1% 100K ohm, 1% 14.7K ohm, 1% 10.0 Ohm, 1% 1.0M Ohm, 1% PWM/PFM I...
Description Off-Line PFC Current Source Controller

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    KDV1471

Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
Part No. KDV1471
OCR Text ...A B C CAPACITANCE(CIV) 30.16~33.63 33.30~37.13 36.77~40.99 Type Name UNIT pF Marking Grade Lot No. W3 ELECTRICAL CHARACTERI...0M z f=5 H 0M f=7 0MHz 0 f=1 rs - f 1 VR =1.5V Ta=25 C Ta=25 C 100 50 30 SERIES RESISTA...
Description FM Tuning
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

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    KDV1472

Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
Part No. KDV1472
OCR Text ...A B C CAPACITANCE(CIV) 30.16~33.63 33.30~37.13 36.77~40.99 pF UNIT Marking Type Name Grade B ELECTRICAL CHARACTERISTICS (Ta=25 ) C...0M f=7 MHz 00 f=1 100 50 30 0.7 10 0 1 2 3 4 5 0.5 20 50 100 300 500 1...
Description FM Tuning
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(FM RADIO BAND TUNING)
Negative Fixed Linear Voltage Regulators; Package: TO-99; VDIFF (V): 35; IOUT (A): 1.5;

File Size 39.03K  /  2 Page

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