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    BYV410X-600

NXP Semiconductors
Part No. BYV410X-600
OCR Text ...18 90 60 30 12 120 0.1 12 6 6 0 0 0 5 7 IF(AV) (A) 15 0 5 IF(AV) (A) 10 Fig 1. Forward power d...600_1 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 -- 29 June 2009 ...
Description Enhanced ultrafast dual rectifier diode

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    BYC8X-600

Philips Semiconductors
NXP
Part No. BYC8X-600
OCR Text ...fast 5. thermal characteristics 6. isolation characteristics table 4. thermal characteristics symbol parameter conditions min typ max unit r...600_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 5 september 2007 4 of 10 nxp...
Description Rectifier Diode Hyperfast

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    ST Microelectronics
Part No. TN1205T-600
OCR Text ...tm i tm = 24 a, t p = 380 s 1.6 v v t0 threshold voltage t j = 125 c 0.85 v r d dynamyc restistance t j = 125 c 30 m i drm i rrm v drm ...600 characteristics doc id 16339 rev 1 3/8 table 4. thermal resistance...
Description Standard SCRs

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    Vishay
Part No. BYM10-600 BYM10-400 BYM10-50 BYM10-800 GL41B GL41D GL41J GL41G GL41A GL41K BYM10-100 BYM10-1000 BYM10-200
OCR Text ...tion to ambient, 0.24 x 0.24 ? (6.0 x 6.0mm) copper pads to each terminal (2) thermal resistance from junction to terminal, 0.24 x 0.24 ? (6.0 x 6.0mm) copper pads to each terminal features  plastic package has underwriters laboratories ...
Description Surface Mount Glass Passivated Junction Rectifiers Forward Current 1.0A

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    YENYO TECHNOLOGY Co., Ltd
Part No. T1650-600
OCR Text ... o b m y s i b t(rms) b a 6 1 ) e v a w e n i s l l u f ( t n e r r u c e t a t s - n o s m r f = 50hz t = 20ms 160...600 s e ries r e v . 1 2/ 2 ...
Description TRIAC

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    BYC5-600

Philips Semiconductors
Part No. BYC5-600
OCR Text ...change of current di f /dt. fig.6. origin of switching losses in transistor due to diode reverse recovery. fig.7. typical reverse recovery...600 rs = 0.09 ohms vo = 1.3 v 150 137.5 125 112.5 average forward current, if(av) (a) forward dissip...
Description Rectifier diode ultrafast/ low switching loss

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    BT151-600 BT151

SemiWell Semiconductor
Part No. BT151-600 BT151
OCR Text ...Wave Non-Repetitive t = 8.3ms 7.6 12 120 72 50 5 Over any 20ms period 0.5 2 5 - 40 ~ 125 - 40 ~ 150 Parameter Repetitive Peak Off-State ...600 Electrical Characteristics Symbol Items VAK = VDRM TC = 25 C TC = 125 C ITM = 23 A VAK = 6 V(...
Description 600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers

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    BYC20-600

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BYC20-600
OCR Text ...tp T 10-2 tp t T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width BYC20-600_1 (c) NXP B.V. 2007. All rights reser...
Description    Rectifier diode, hyperfast
Hyperfast power diode BYC20-600<SOD59 (TO-220AC)|<<http://www.nxp.com/packages/SOD59.html<1<,;

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    BYM10-600-E3/75 BYM10-600-E3/1 BYM10-100-E3

VISHAY SEMICONDUCTORS
Vishay Siliconix
Part No. BYM10-600-E3/75 BYM10-600-E3/1 BYM10-100-E3
OCR Text ...tion to ambient, 0. 24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal (2) thermal resistance from junction to terminal, 0. 24 x 0.24" (...600 bym 10-800 bym 10-1000 unit standard recovery device: 1st band is white gl41a gl41b gl41d gl41...
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB
Surface Mount Glass Passivated Junction Rectifier

File Size 97.06K  /  5 Page

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