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				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	UPD23C64300F9-XXX-BC3 UPD23C64300 UPD23C64300F9-BC3
OCR Text	4M-WORD BY 16-BIT (WORD MODE) Description The PD23C64300 is a 67,108,864 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 8,388,608 words by 8 bits, WORD mode : 4,194,304 words by 16 bits). The active levels ...
Description	64m-bit MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位（字节模式 4分字6位（字模式） CAP 3.6PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
File Size	215.96K / 16 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPD23C32380GZ-XXX-MJH UPD23C32340 UPD23C32340F9-BC3 UPD23C32340F9-XXX-BC3 UPD23C32340GZ-MJH UPD23C32340GZ-XXX-MJH UPD23C32380 UPD23C32380F9-BC3 UPD23C32380F9-XXX-BC3 UPD23C32380GZ-MJH
OCR Text	4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The PD23C32340 and PD23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits,...
Description	32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
File Size	282.93K / 20 Page	View it Online	Download Datasheet

				http:// Infineon Technologies AG SIEMENS AG
Part No.	HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB314100BJ-70 Q67100-Q2035 HYB314100BJ-60
OCR Text	... 4.96 4m x 1-bit dynamic ram low power 4m x 1-bit dynamic ram a dvanced information ? 4 194 304 words by 1-bit organization ? 0 to 70 ?c operating temperature ? fast page mode operation ? performance: ? single + 3....
Description	4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器 4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
File Size	1,156.12K / 23 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	UPD23C32300GZ-XXX-MJH UPD23C32300 UPD23C32300F9-BC3 UPD23C32300F9-XXX-BC3 UPD23C32300GZ-MJH
OCR Text	4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) Description The PD23C32300 is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words ...
Description	32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式） CAP 0.01UF 100V 5% X7R SMD-0805 TR-13 PLATED-NI/SN 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
File Size	236.14K / 16 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPD23C32000ALGY-XXX-MKH UPD23C32000AL UPD23C32000ALGX UPD23C32000ALGX-XXX UPD23C32000ALGY-MJH UPD23C32000ALGY-MKH UPD23C32000ALGY-XXX-MJH
OCR Text	4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) Description The PD23C32000AL is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 word...
Description	32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
File Size	253.22K / 20 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
Part No.	MF32M1-LCDATXX MF3129-LSDATXX MF3513-LSDATXX MF31M1-LCDATXX MF31M1-LSDATXX MF3257-LCDATXX MF32M1-LSDATXX MF34M1-LSDATXX MF3257-LSDATXX MF34M1-LCDATXX MF3129-LCDATXX MF3513-LCDATXX MF365A-LSDATXX MF365A-LCDATXX
OCR Text	...ain data. Available in 64K byte-4M byte capacities, Mitsubishi's Static RAM cards are available with a 68-pin, two-piece connector. FEATURES...bit SRAMx2 256K bit SRAMx4 1M bit SRAMx2 1M bit SRAMx4 1M bit SRAMx8 1 M b i t S R A M x 16 Outli...
Description	LED 5MM VERT RED/GRN BICLR PCMNT 8/16-bit Data Bus Static RAM Card 16位产品数据总线静态存储器 DBMM25SK 16位产品数据总线静态存储器
File Size	256.16K / 11 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1424AV18 CY7C1424AV18-167BZC CY7C1424AV18-300BZXI CY7C1424AV18-250BZI CY7C1424AV18-300BZI CY7C1424AV18-200BZXC CY7C1424AV18-167BZXI CY7C1424AV18-278BZXC CY7C1424AV18-200BZI CY7C1424AV18-300BZC CY7C1424AV18-278BZXI CY7C1424AV18-167BZI CY7C1424AV18-278BZI CY7C1424AV18-300BZXC CY7C1424AV18-200BZC CY7C1424AV18-250BZXC CY7C1424AV18-250BZC CY7C1424AV18-200BZXI CY7C1424AV18-278BZC CY7C1424AV18-167BZXC CY7C1422AV18-278BZC CY7C1429AV18-278BZC CY7C1423AV18-278BZC
OCR Text	...e Features * 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36) * 300-MHz clock for high bandwidth * 2-Word burst for reducing address bus...bit words in the case of CY7C1422AV18, two 9-bit words in the case of CY7C1429AV18, two 18-bit words...
Description	36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
File Size	471.74K / 28 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH28F004SU-Z1
OCR Text	4M (512K x 8) Flash Memory TOP VIEW * 512K x 8 Word Configuration * 5 V Write/Erase Operation (5 V VPP) - No Requirement for DC/DC Conv...bit Systems * Erase All Unlocked Blocks Writing of memory data is performed typically within 13 s. A...
Description	4M (512K 】 8) Flash Memory 4M (512K 8) Flash Memory
File Size	179.96K / 32 Page	View it Online	Download Datasheet

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