4m x 16bit edo dram pdf Datasheet P1 Description --- IC-ON-LINE


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4m x 16bit edo dram Datasheet PDF File

For 4m x 16bit edo dram Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
Description	64mbit (1M x 16bit x 4 banks) bynchronous dram LVTTL, 125MHz 1M x 16bit x 4 Banks Synchronous dram 100万16 × 4银行同步dram
File Size	124.02K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIx[Hynix Semiconductor]
Part No.	HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
Description	Sdram - 64mb 4 Banks x 1M x 16bit Synchronous dram 4m x 16 SYNCHRONOUS dram, 6 ns, PDSO54 4 Banks x 1M x 16bit Synchronous dram 4m x 16 SYNCHRONOUS dram, 5 ns, PDSO54 x16 Sdram x16内存 4 Banks x 1M x 16bit Synchronous dram 4m x 16 SYNCHRONOUS dram, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% x7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:x7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
File Size	142.41K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K4S641632C-TC/L70 K4S641632C-TC/L80 K4S641632C-TC/L60 K4S641632C-TC/L75 K4S641632C-TL60 K4S641632C-TC80
Description	64mbit (1M x 16bit x 4 banks) bynchronous dram LVTTL, 125MHz 1M x 16bit x 4 Banks Synchronous dram 64mbit (1M x 16bit x 4 banks) bynchronous dram LVTTL, 166MHz
File Size	1,152.92K / 42 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIx[Hynix Semiconductor]
Part No.	HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 HY57V641620HGT-55 HY57V641620HGT-H HY57V641620HG HY57V641620HGT-P HY57V641620HGLT-P HY57V641620HGT-S HY57V641620HGT-8 HY57V641620HGT-K
Description	4 Banks x 1M x 16bit Synchronous dram 4银行× 1米16位同步dram 4 Banks x 1M x 16bit Synchronous dram 4m x 16 SYNCHRONOUS dram, 4.5 ns, PDSO54
File Size	84.91K / 12 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology, Inc.
Part No.	M52D32162A-7.5BG M52D32162A-10TG
Description	1M x 16bit x 2Banks Synchronous dram 2M x 16 SYNCHRONOUS dram, 7 ns, PBGA54 1M x 16bit x 2Banks Synchronous dram 2M x 16 SYNCHRONOUS dram, 8 ns, PDSO54
File Size	780.22K / 30 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology, Inc.
Part No.	M52S16161A-10TG M52S16161A-8BG
Description	512K x 16bit x 2Banks Synchronous dram 1M x 16 SYNCHRONOUS dram, 9 ns, PDSO50 512K x 16bit x 2Banks Synchronous dram 1M x 16 SYNCHRONOUS dram, 7 ns, PBGA60
File Size	765.60K / 29 Page	View it Online	Download Datasheet

				AMIC Technology
Part No.	A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316AV-7
Description	Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous dram Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous dram Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous dram Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous dram
File Size	1,429.16K / 46 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5 HY51VS65163HGLT-45 HY51VS65163HGLT-5 HY51VS65163HGT-45 HY51VS65163HGLT-6 HY51VS65163HGT-5 HY51VS65163HGT-6
Description	4m x 16bit edo dram, 3.3V, LVTTL-interface, 50ns, low power 4m x 16bit edo dram, 3.3V, LVTTL-interface, 60ns, low power 4m x 16bit edo dram, 3.3V, LVTTL-interface, 45ns, low power
File Size	97.47K / 11 Page	View it Online	Download Datasheet

				HYNIx[Hynix Semiconductor] Hynix Semiconductor, Inc.
Part No.	HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
Description	Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1M x 16bit edo dram 100万16 edo公司的dram 1M x 16bit edo dram 1M x 16 edo dram, 50 ns, PDSO44 1M x 16bit edo dram 1M x 16 edo dram, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
File Size	105.82K / 12 Page	View it Online	Download Datasheet

				AMIC Technology
Part No.	A43L2616V-6PH A43L2616V-7PH
Description	Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous dram Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous dram
File Size	862.91K / 41 Page	View it Online	Download Datasheet

For 4m x 16bit edo dram Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |