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Elite Semiconductor Memory Technology, Inc.
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Part No. |
M52S16161A-10TG M52S16161A-8BG
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Description |
512K x 16bit x 2Banks Synchronous dram 1M x 16 SYNCHRONOUS dram, 9 ns, PDSO50 512K x 16bit x 2Banks Synchronous dram 1M x 16 SYNCHRONOUS dram, 7 ns, PBGA60
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File Size |
765.60K /
29 Page |
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Hynix Semiconductor
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Part No. |
HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5 HY51VS65163HGLT-45 HY51VS65163HGLT-5 HY51VS65163HGT-45 HY51VS65163HGLT-6 HY51VS65163HGT-5 HY51VS65163HGT-6
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Description |
4m x 16bit edo dram, 3.3V, LVTTL-interface, 50ns, low power 4m x 16bit edo dram, 3.3V, LVTTL-interface, 60ns, low power 4m x 16bit edo dram, 3.3V, LVTTL-interface, 45ns, low power
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File Size |
97.47K /
11 Page |
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HYNIx[Hynix Semiconductor] Hynix Semiconductor, Inc.
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Part No. |
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
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Description |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1M x 16bit edo dram 100万16 edo公司的dram 1M x 16bit edo dram 1M x 16 edo dram, 50 ns, PDSO44 1M x 16bit edo dram 1M x 16 edo dram, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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File Size |
105.82K /
12 Page |
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it Online |
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Price and Availability
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