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  40 50a Datasheet PDF File

For 40 50a Found Datasheets File :: 11285    Search Time::1.094ms    
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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ... 10 10 0 s s 1 m s 10 40 at ms (T ion (1 sh 20 Operation in this area is limited by R DS(on) c= ot) ) 25 C 0 50 100 150 Tc (C) 200 Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -3...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ...e2 Note1 Ratings -30 20 -10 -40 -10 20 150 -55 to +150 Unit V V A A A W C C 2 2SJ506(L), 2SJ506(S) Electrical Characteristics (...50a/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -30 V, VGS = 0 VGS = 16V, VDS =...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ517

HITACHI[Hitachi Semiconductor]
Part No. 2SJ517
OCR Text ...4 V -0.5, -1, -2 A 0.1 0 -40 0.2 0.1 -0.1 -0.2 V DS = -10 V Pulse Test -0.5 -1 -2 -5 Drain Current I D (A) -10 0 40 80 120 160 Case Temperature Tc (C) 4 2SJ517 Body-Drain Diode Reverse Recovery Time 500 Reverse Recove...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.79K  /  8 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ....4 -10 V -2 A -0.5, -1 A 0.2 0 -40 0.2 0.1 -0.1 -0.2 V DS = -10 V Pulse Test -0.5 -1 -2 -5 Drain Current I D (A) -10 0 40 80 120 160 Case Temperature Tc (C) 4 2SJ518 Body-Drain Diode Reverse Recovery Time 100 1000 300 100 30...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ... Power vs. Temperature Derating 40 Pch (W) I D (A) Maximum Safe Operation Area -1000 -300 30 -100 -30 10 s 10 1 Channel Dissipation Drain Current 20 -10 -3 -1 -0.3 -0.1 10 s = DC (1 10 m Op sh s er ot) Operat...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ... Power vs. Temperature Derating 40 Pch (W) I D (A) Maximum Safe Operation Area -100 -50 10 10 PW 30 -20 -10 -5 -2 -1 -0.5 0 s s Channel Dissipation Drain Current 20 D = 1 s m C 10 0 50 100 ...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ... -- 0.17 0.24 5.0 400 220 75 10 40 75 65 -1.1 65 Max -- -- -10 10 -2.0 0.22 0.37 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF n...50a/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ...e2 Note1 Ratings -60 20 -10 -40 -10 -10 8.5 20 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW 10s, duty...50a/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ... Power vs. Temperature Derating 40 Pch (W) I D (A) -1000 -300 Maximum Safe Operation Area 30 -100 -30 -10 -3 -1 -0.3 -0.1 10 s 0 s m Op ms s er ( at ion 1 sh o (T Operation in c= t) 25 this area is limited by R DS(on) DC ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text ... Power vs. Temperature Derating 40 1000 Maximum Safe Operation Area Pch (W) I D (A) 300 100 30 10 3 1 0.3 DC 30 10 s PW Op er Channel Dissipation 10 = 10 Drain Current 1 ms c= 20 m 0 sh s ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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For 40 50a Found Datasheets File :: 11285    Search Time::1.094ms    
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