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  4-ghz Datasheet PDF File

For 4-ghz Found Datasheets File :: 26665    Search Time::1.328ms    
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    TIM1414-4-252

Toshiba Semiconductor
Part No. TIM1414-4-252
OCR Text 4-252 TECHNICAL DATA FEATURES HIGH POWER P1dB=36.0 dBm at 13.75 GHz to 14.5 GHz HIGH GAIN G1dB=5.5 dB at 13.75 GHz to 14.5 GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTI...
Description MICROWAVE POWER GaAs FET

File Size 145.87K  /  4 Page

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    CPPD-2-4

CRYSTEK CORPORATION
Part No. CPPD-2-4
OCR Text 4 Input Freq. Range 2.0-4.0 GHz Features: Input Drive Level: +10dBm to +20dBm Conversion Loss: 13dB typical Isolation (Fo, 3Fo, 4Fo): 33dB typical Small In-Line SMA Package Input Frequency Range 2.0 to 4.0 GHz Output Frequency Range 4.0...
Description Crystek POCKET Passive Doubler

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    EIC0910-4

Excelics Semiconductor, Inc.
Part No. EIC0910-4
OCR Text 4 UPDATED 08/21/2007 9.50-10.50GHz 4-Watt Internally-Matched Power FET FEATURES * * * * * * * 9.50-10.50GHz Bandwidth Input/Output I...GHz) 8.75 9.00 9.25 9.50 9.75 10.00 10.25 10.50 10.75 11.00 11.25 --- S11 --MAG 0.737 0.655 0.549...
Description 9.50-10.50GHz 4-Watt Internally-Matched Power FET

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    EIC1213-4

Excelics Semiconductor, Inc.
Part No. EIC1213-4
OCR Text 4 UPDATED 08/21/2007 12.70-13.20GHz 4-Watt Internally-Matched Power FET FEATURES * * * * * * * 12.70 -13.20GHz Bandwidth Input/Outpu...GHz) 12.0 12.2 12.4 12.6 12.8 13.0 13.2 13.4 13.6 13.8 14.0 --- S11 --MAG 0.6013 0.5629 0.5404 0....
Description 12.70-13.20GHz 4-Watt Internally-Matched Power FET

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    EIC1212-4

Excelics Semiconductor, Inc.
Part No. EIC1212-4
OCR Text 4 ISSUED DATE: 09/20//2007 12.20-12.70 GHz 4-Watt Internally Matched Power FET FEATURES * * * * * * * 12.20-12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 6.5dB Power Gain at 1...
Description 12.20-12.70 GHz 4-Watt Internally Matched Power FET

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    EIC8596-4 EIC8596-4NH

Excelics Semiconductor, Inc.
http://
Part No. EIC8596-4 EIC8596-4NH
OCR Text 4 UPDATED 08/21/2007 8.50-9.60GHz 4-Watt Internally-Matched Power FET FEATURES * * * * * * * 8.50 -9.60GHz Bandwidth Input/Output Im...GHz) --- S11 --MAG ANG 8.00 8.25 8.50 8.75 9.00 9.25 9.50 9.75 10.00 10.25 10.50 0.639 0.58...
Description 8.50-9.60GHz 4-Watt Internally-Matched Power FET

File Size 176.03K  /  4 Page

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    ST-4

Micronetics, Inc.
Part No. ST-4
OCR Text 4 MINI-NOISE DIODES 10 KHZ TO 3 GHZ DESCRIPTION Micronetics' ST-4 Diode with its small, surface mount SOT23 package are ideally suited for medium and high volume production circuits. Their Gaussian wideband highly stable noise characteris...
Description MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE

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    EIC7785-4 EIC7785-4NH

Excelics Semiconductor, Inc.
Excelics Semiconductor,...
Part No. EIC7785-4 EIC7785-4NH
OCR Text 4 UPDATED 08/21/2007 7.70-8.50GHz 4-Watt Internally-Matched Power FET FEATURES * * * * * * * 7.70-8.50GHz Bandwidth Input/Output Imp...GHz) --- S11 --MAG ANG 7.5 7.6 7.7 7.8 7.9 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 0.6034 0.5516 0.49...
Description 7.70-8.50GHz 4-Watt Internally-Matched Power FET
   7.70-8.50GHz 4-Watt Internally-Matched Power FET

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    EIC5964-4

Excelics Semiconductor, Inc.
Part No. EIC5964-4
OCR Text 4 UPDATED 08/21/2007 5.90-6.40 GHz 4-Watt Internally Matched Power FET FEATURES * * * * * * * 5.90-6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compr...
Description 5.90-6.40 GHz 4-Watt Internally Matched Power FET

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    EIC1314-4

Excelics Semiconductor, Inc.
Part No. EIC1314-4
OCR Text 4 UPDATED 08/21/2007 13.75-14.50GHz 4-Watt Internally-Matched Power FET FEATURES * * * * * * * 13.75 -14.50GHz Bandwidth Input/Outpu...GHz) --- S11 --MAG ANG 13.0 13.2 13.4 13.6 13.8 14.0 14.2 14.4 14.6 14.8 15.0 0.5078 0.4776...
Description 13.75-14.50GHz 4-Watt Internally-Matched Power FET

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