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Nanya Technology
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| Part No. |
NT256D64S8HA0G-6
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| OCR Text |
...te Dual In-Line Memory Module * 32mx64 Double Data Rate (DDR) SDRAM DIMM
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* DRAM DLL aligns DQ and DQS transitions with clock transitions. Also aligns QFC transitions with clock during R... |
| Description |
256MB DIMM
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| File Size |
149.74K /
13 Page |
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NANYA TECHNOLOGY CORP
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| Part No. |
NT512D64SH8B0GN-75B
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| OCR Text |
...gm is organized as two ranks of 32mx64 high-speed memory array and uses eight 32mx16 ddr sdrams tsop packages. the nt256d64sh4b0gm is organized a single rank of 32mx64 high-speed memory array and uses four 32mx16 ddr sdrams tsop packages.... |
| Description |
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
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| File Size |
508.34K /
18 Page |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
M470T3354EZ3-LD5
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| OCR Text |
.... ......... 7 7.1 256mb, 32mx64 module(m470t3354ez3) ................. ................. ................ .............. .............. ............ 7 7.2 512mb, 64mx64 module(m470t6554ez3) ................ .................... |
| Description |
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
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| File Size |
343.91K /
20 Page |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
M470T2953CZ0-LD5 M470T2953CZ3-LD5
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| OCR Text |
........... ......... 7 7.2 256mb, 32mx64 module - m470t3354cz3/m470t3354cz0 ................. .............. .............. ............ ......... 8 7.3 1gb, 128mx64 module - m470t2953cz3/m470t2953cz0 ................ ............... ......... |
| Description |
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
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| File Size |
345.22K /
20 Page |
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IBM Microeletronics
DB Lectro, Inc.
International Business Machines, Corp.
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| Part No. |
IBM13N32644JCA-260T IBM13N32734JCA-260T IBM13N32644JCA-360T IBM13N32734JCA-360T
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| OCR Text |
...te dual in-line memory module ? 32mx64/72 synchronous dram dimm ? two speed sorts: ? -260 and -360 for pc100 applications ? inputs and outputs are lvttl (3.3v) compatible ? single 3.3v 0.3v power supply ? single pulsed ras interface ? sdr... |
| Description |
x64 SDRAM Module
32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2组不带缓的冲同步动态RAM模块)
x72 SDRAM Module x72内存模块
32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2组不带缓冲的同步动态RAM模块) 32M × 72配置双行缓冲内存模组2M × 72配置2组不带缓冲的同步动态内存模块）
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| File Size |
163.15K /
18 Page |
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Nanya Technology
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| Part No. |
NT256S64V8HC0G
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| OCR Text |
32mx64 bit Two Bank Unbuffered SDRAM Module
based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
Features
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168-Pin Unbuffered 8-Byte Dual In-Line Memory Module
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Intended... |
| Description |
256MB SDRAM Module
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| File Size |
131.93K /
10 Page |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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| OCR Text |
...MB 1GB 1GB 1GB 1GB Organization 32mx64 32mx64 32mx64 32mx64 64Mx64 64Mx64 64Mx64 64Mx64 128Mx64 128Mx64 128Mx64 128Mx64 Component Composition 32Mx16(K4T51163QB)*4 32Mx16(K4T51163QB)*4 32Mx16(K4T51163QB)*4 32Mx16(K4T51163QB)*4 32Mx16(K4T5116... |
| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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| File Size |
325.20K /
19 Page |
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it Online |
Download Datasheet |
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Nanya Technology
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| Part No. |
NT256D64S88ABG
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| OCR Text |
...te Dual In-Line Memory Module * 32mx64 Double Data Rate (DDR) SDRAM DIMM
w
w
a D . w
aS t
ee h
4U t
om .c
* DRAM DLL aligns DQ and DQS transitions with clock transitions. * Address and control signals are fully synchro... |
| Description |
256MB DIMM
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| File Size |
212.20K /
15 Page |
View
it Online |
Download Datasheet |
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Nanya Technology
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| Part No. |
NT256D64S88AAG
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| OCR Text |
...te Dual In-Line Memory Module * 32mx64 Double Data Rate (DDR) SDRAM DIMM
w
w
a D . w
aS t
ee h
4U t
om .c
* DRAM DLL aligns DQ and DQS transitions with clock transitions. * Address and control signals are fully synch... |
| Description |
256MB DIMM
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| File Size |
221.58K /
15 Page |
View
it Online |
Download Datasheet |
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