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Spansion, Inc.
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Part No. |
S29GL032M10BBIR10 S29GL032M10BBIR12 S29GL032M10BBIR13 S29GL032M10BCIR32 S29GL032M10BCIR33 S29GL032M10BCIR42 S29GL032M10BCIR43 S29GL032M10FCIR10 S29GL032M10FCIR12 S29GL032M10FCIR13 S29GL032M10FCIR20 S29GL032M10FCIR22 S29GL032M10FCIR23 S29GL032M10FCIR30 S29GL032M10FCIR32 S29GL032M10FCIR33 S29GL032M10FCIR40 S29GL032M10FCIR42 S29GL032M10FCIR43 S29GL032M10FFIR10 S29GL032M10FFIR12 S29GL032M10FFIR13 S29GL032M10FFIR20 S29GL032M10FFIR22 S29GL032M10FFIR23 S29GL032M10FFIR32 S29GL032M10FFIR33 S29GL032M10FFIR42 S29GL032M10FFIR43 S29GL032M10TFIR10 S29GL032M10TFIR12 S29GL032M10TFIR13 S29GL032M10TFIR20 S29GL032M10TFIR22 S29GL032M10TFIR23 S29GL032M10TFIR32 S29GL032M10TFIR33 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90BDIR13 S29GL064M90BDIR20 S29GL064M90BDIR22 S29GL064M90BDIR23 S29GL064M90BDIR30 S29GL064M90BDIR32 S29GL064M90BDIR33 S29GL032M10BAIR00 S29GL032M10BAIR02 S29GL032M10BAIR03 S29GL032M10BAIR10 S29GL032M10BAIR12 S29GL032M10BAIR13 S29GL032M10BAIR20 S29GL032M10BAIR22 S29GL032M10BAIR23 S29GL032M10FBIR03 S29GL064M90FBIR03 S29GL032M10FBIR10 S29GL064M90FBIR10 S29GL032M10FBIR12 S29GL064M90FBIR12 S29GL032M10FBIR13 S29GL032M10FBIR20 S29GL064M90FBIR20 S29GL032M10FBIR22 S29GL064M90FBIR22 S29GL032M10F
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OCR Text |
32megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet
PRELIMINARY
Distinctive Characteristics
Architectural Advantages
Single power supply operation -- 3 volt read, erase, and program... |
Description |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142-EC, TSOP-56 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
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File Size |
2,187.83K /
160 Page |
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ETC Spansion Inc. Spansion, Inc.
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Part No. |
S29GL032M10BACR00 S29GL032M10BACR12 S29GL032M10BACR03 S29GL032M10BACR10 S29GL032M10BACR13 S29GL032M10BACR20 S29GL256M S29GL032M10FBIR00 S29GL032M10TFCR10 S29GL032M10BACR23 S29GL032M10TFCR20 S29GL032M10TCIR60 S29GL032M10TCIR63 S29GL032M10FBCR22 S29GL032M10FFIR63 S29GL032M10BFCR00 S29GL032M10FACR42 S29GL032M10BAIR22 S29GL032M10TCCR12 S29GL032M10TCCR30 S29GL032M10BCIR30 S29GL032M10FFCR60 S29GL032M10BACR32 S29GL032M10BACR30 S29GL032M10BACR33 S29GL032M10BACR40 S29GL032M10BACR42 S29GL032M10BACR43 SPANSIONINC.-S29GL032M10BBCR42 S29GL032M10FCIR43 S29GL032M10FCIR30 S29GL032M10FCIR20 S29GL032M10FCIR02 S29GL032M10FCIR23 S29GL032M10FCIR03 S29GL032M10FCIR50 SPANSIONINC.-S29GL032M10BBCR02 SPANSIONINC.-S29GL032M10TBCR23 IR62 S29GL032M10TACR43 S29GL032M10TCIR13 S29GL032M10FBCR40 S29GL032M10BBCR63 S29GL032M10TFCR52 S29GL032M10TFCR53 S29GL032M10TFCR50 S29GL032M10FFCR63 S29GL032M10TACR63 S29GL032M10TFIR53 S29GL032M10TFIR50 S29GL032M10FACR62 S29GL032M10TACR62 S29GL032M10FACR60 S29GL032M10BFIR33 S29GL032M10BFCR63 S29GL032M10FFCR62 S29GL032M10BBIR52 S29GL032M10BFCR62 S29GL032M10BBIR50 S29GL032M10TBCR60 S29GL032M10BFIR63 S29GL032M10BFIR60 S29GL032M10BFCR12 S29GL032M10FFCR13 S29GL032M10FFCR10 S29GL032M10T
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OCR Text |
...t, 128 megabit, 64 megabit, and 32megabit, 3.0 volt-only page mode flash memory featuring 0.23 um mirrorbit process technology datasheet distinctive characteristics architectural advantages |
Description |
CAP 15PF 100V 5% NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR TERM BLOCK 3.5MM HOR 6POS PCB Ceramic Capacitor Sample Kit, High CV MirrorBit闪存系列 MirrorBit Flash Family MirrorBit闪存系列 FLEX CONNECTOR, 10 POSN., SMT, VERTICAL, W/EXT.SLIDER, ZIF, T&R RoHS Compliant: Yes MirrorBit闪存系列 Tantalum Capacitor; Capacitance:470uF; Capacitance Tolerance: /- 20 %; Working Voltage, DC:6V; Package/Case:7343-43; Terminal Type:PCB SMT; ESR:0.001ohm; Leaded Process Compatible:No; Packaging:Cut Tape MirrorBit闪存系列 Replaced by PTB48520W : MirrorBit闪存系列 MirrorBit Flash Family 2M X 16 FLASH 3V PROM, 100 ns, PBGA64 MirrorBit Flash Family 2M X 16 FLASH 3V PROM, 100 ns, PBGA48 CAP D POLYMER TANT 330UF 4V 20%
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File Size |
2,283.38K /
159 Page |
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Spansion Inc. Spansion, Inc. SPANSION LLC
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Part No. |
S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR03 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR13 S29GL064M90FCIR20 S29GL256M10TAIR13 S29GL064M90TDIR13 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR03 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR33 S29GL064M90TBIR33 S29GL064M90TBIR32 S29GL064M90TFIR23 S29GL256M10TFIR23 S29GL064M90BCIR13 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR03 S29GL064M90BDIR33 S29GL064M90BDIR02 S29GL064M90BDIR32 S29GL064M90BDIR23 S29GL064M90TBIR22 S29GL064M90TBIR23 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR23 S29GL064M90FBIR03 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR13 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR23 SPANSIONLLC-S29GL064M90FFIR32
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OCR Text |
...t, 128 megabit, 64 megabit, and 32megabit, 3.0 volt-only page mode flash memory featuring 0.23 um mirrorbit process technology datasheet distinctive characteristics architectural advantages |
Description |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
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File Size |
2,173.74K /
160 Page |
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Spansion, Inc.
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Part No. |
S29GL128M10TBIR20 S29GL128M10TBIR22
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OCR Text |
...t, 128 megabit, 64 megabit, and 32megabit, 3.0 volt-only page mode flash memory featuring 0.23 um mirrorbit process technology datasheet distinctive characteristics architectural advantages |
Description |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
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File Size |
2,050.87K /
162 Page |
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Spansion, Inc.
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Part No. |
S29GL128M10TCIR12 S29GL128M10TBIR12
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OCR Text |
...t, 128 megabit, 64 megabit, and 32megabit, 3.0 volt-only page mode flash memory featuring 0.23 um mirrorbit process technology datasheet distinctive characteristics architectural advantages |
Description |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, TSOP-56 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
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File Size |
2,124.07K /
160 Page |
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