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300us Datasheet PDF File

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				HYNIX SEMICONDUCTOR INC
Part No.	HY27SG082G2M-TCB HY27UG162G2M-TCB HY27SG162G2M-SEP HY27SG162G2M-SIP HY27SG162G2M-SPIP
OCR Text	...ns (min.) - page program time: 300us (typ.) copy back program mode - fast page copy without external buffering cache program mode - internal cache register to improve the program throughput fast block erase - block erase time: 2ms ...
Description	256M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 128M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 128M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
File Size	437.68K / 48 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
Part No.	MAGX-001214-250L00 MAGX-001214-SB1PPR MAGX-001214-250L00-PROD
OCR Text	... i dq = 250ma, pout = 250w 300us pulse / 10% duty 0.60oc/w operating temp - 40 to +95oc storage temp - 65 to +150oc mounting temperature see solder reflow profile esd min. - machine model (mm) 50v esd min. - ...
Description	GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
File Size	750.53K / 6 Page	View it Online	Download Datasheet

				Silicon Standard Corp.
Part No.	SSM4955GM
OCR Text	...erature of 150c. 2.pulse width <300us, duty cycle <2%. 3.mounted on a square inch of copper pad on fr4 board ; 135c/w when mounted on the minimum pad area required for soldering. management and general load-switching circuits. the ssm4955g...
Description	Dual P-channel Enhancement-mode Power MOSFETs
File Size	492.49K / 5 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
Part No.	SSG4512CE SSG4512CE-15
OCR Text	...otes: 1. pulse test: pw Q 300us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing. ssg4512ce n & p-ch enhancement mode power mosfet n-ch: 6.9 a, 30 v, r ds(on) 31 m ? p-ch: -5.2 a, -3...
Description	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
File Size	3,292.67K / 7 Page	View it Online	Download Datasheet

				SAMHOP[SamHop Microelectronics Corp.] ETC[ETC]
Part No.	SDM4953
OCR Text	...inuous a @ TJ=125 C b -P ulsed (300us Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit -30 20 4.9 30 1.7 2 -55 t...
Description	Dual P -Channel E nhancement Mode F ield E ffect Transistor
File Size	305.67K / 5 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp. N.A. ETC
Part No.	SDM9926A
OCR Text	...inuous a @ TJ=125 C b -P ulsed (300us Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 8 6.0 35 1.7 2 -55 to ...
Description	Dual N-Channel E nhancement Mode F ield E ffect Transistor
File Size	299.01K / 5 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG4502CE
OCR Text	...tes: 1. pulse test: pw Q 300us duty cycle Q 2%. 2. guaranteed by design, not subject to production testing. ssg4502ce n & p-ch enhancement mode power mosfet n-ch: 10.0 a, 30 v, r ds(on) 16 m ? p-ch: -8.5a, -3...
Description	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
File Size	3,229.21K / 7 Page	View it Online	Download Datasheet

				LITE-ON ELECTRONICS INC
Part No.	SBL850
OCR Text	...0.5 n.m (5.1 kgf.cm) notes : 1. 300us pulse width, 2% duty cycle. 2. measured at 1.0mhz and applied re verse voltage of 4.0v dc. 3.thermal resistance junction to cas e. v rms v dc v rrm i (av) i...
Description	8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC
File Size	70.84K / 2 Page	View it Online	Download Datasheet

				LITE-ON ELECTRONICS INC
Part No.	SBF1035CT
OCR Text	...0.5 n.m (5.1 kgf.cm) notes : 1. 300us pulse width, 2% duty cycle. 2. measured at 1.0mhz and applied re verse voltage of 4.0v dc. 3.thermal resistance junction to cas e. v rms v dc v rrm i (av) i...
Description	10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
File Size	71.77K / 2 Page	View it Online	Download Datasheet

				LITE-ON SEMICONDUCTOR CORP
Part No.	SBG1035CT
OCR Text	... =100 c @t j =25 c notes : 1. 300us pulse width, 2% duty cycle. 2. thermal resistance junction to ca se. 3. measured at 1.0mhz and applied re verse voltage of 4.0v dc. c c semiconductor lite-on maxim...
Description	10 A, 35 V, SILICON, RECTIFIER DIODE
File Size	69.66K / 2 Page	View it Online	Download Datasheet

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