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TOSHIBA
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| Part No. |
2SD2387
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| OCR Text |
...ce = 5 v, i c = 7 a 5000 D 30000 dc current gain h fe (2) v ce = 5 v, i c = 12 a 2000 D D collector-emitter saturation voltage v ce (sat) i c = 7 a, i b = 7 ma D D 2.5 v base-emitter voltage v be v ce = 5 v, i c ... |
| Description |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications
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| File Size |
132.58K /
4 Page |
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it Online |
Download Datasheet
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TOSHIBA
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| Part No. |
TLSH20TP
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| OCR Text |
...inous intensity i v (mcd) 30000 3000 5000 300 500 10 1 100 100 3 5 30 50 1000 ta 25c 10000 50000 620 580 700 0.8 0 0.6 1.0 0.2 0.4 600 640 660 680 i f 20 ma ta 25c
tlrmh20tp,tlsh20tp,tloh20tp,tlyh20tp 2002-01-1... |
| Description |
InGaAlP LED Panel Circuit Indicator
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| File Size |
142.44K /
7 Page |
View
it Online |
Download Datasheet |
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PANASONIC CORP
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| Part No. |
2SD2255Q
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| OCR Text |
...t transfer ratio h fe : 5000 to 30000 l low collector to emitter saturation voltage v ce(sat) : <2.5v n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak col... |
| Description |
7 A, 140 V, NPN, Si, POWER TRANSISTOR
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| File Size |
168.94K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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