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Microsemi
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| Part No. |
APTDF200H170G
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| OCR Text |
...-40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 300 g sp6 pack...900v qrr vs. current rate charge 100 a 200 a 400 a 40 60 80 100 120 140 160 0 3000 6000 9000 12000 -... |
| Description |
FRED 50-1700V
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| File Size |
340.28K /
4 Page |
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it Online |
Download Datasheet
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Microsemi
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| Part No. |
APTDF100H170G
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| OCR Text |
...ber , 2012 www.microsemi.com 3-4 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0....900v qrr vs. current rate charge 50 a 100 a 200 a 20 30 40 50 60 70 80 0 1000 2000 3000 4000 5000 60... |
| Description |
FRED 50-1700V
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| File Size |
311.09K /
4 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APTGT30H170T3G
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| OCR Text |
...22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; ...900v i c = 30a r g = 18 ? 80 ns t d(on) turn-on delay time 100 t r rise time ... |
| Description |
Full Bridge
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| File Size |
390.00K /
6 Page |
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it Online |
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Microsemi
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| Part No. |
APTGT30DA170T1G
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| OCR Text |
...12 cr1 6 5 11 10 pins 1/2 ; 3/4 ; 5/6 must be shorted together absolute maximum ratings these devices are sensitive...900v i c = 30a r g = 18 ? 80 ns t d(on) turn-on delay time 100 t r rise time ... |
| Description |
Boost Chopper
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| File Size |
348.55K /
6 Page |
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it Online |
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Microsemi
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| Part No. |
APT80GA90LD40
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| OCR Text |
... i c = 47a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
217.16K /
9 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT80GA90B APT80GA90S
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| OCR Text |
... i c = 47a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 250 a t j = 125c 1000 i... |
| Description |
IGBT w/o anti-parallel diode
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| File Size |
185.54K /
6 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT64GA90B APT64GA90S
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| OCR Text |
... i c = 38a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 250 a t j = 125c 10... |
| Description |
IGBT w/o anti-parallel diode
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| File Size |
183.21K /
6 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT46GA90JD40
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| OCR Text |
... i c = 47a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
215.33K /
9 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT43GA90S APT43GA90B
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| OCR Text |
... i c = 25a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 250 a t j = 125c 1000 i... |
| Description |
IGBT w/o anti-parallel diode
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| File Size |
187.52K /
6 Page |
View
it Online |
Download Datasheet |
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