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    1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G

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ONSEMI[ON Semiconductor]
Part No. 1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G 1.5SMC7.5AT3 1.5SMC8.2AT3 1.5SMCXXXAT3 15SMC68AT3 1.5SMCXXXAT3G 1.5SMC11AT3 1.5SMC13AT3 1.5SMC15AT3 1.5SMC16AT3 1.5SMC18AT3 1.5SMC20AT3 1.5SMC22AT3 1.5SMC27AT3 1.5SMC36AT3 1.5SMC39AT3 1.5SMC43AT3 1.5SMC47AT3 1.5SMC6.8AT3 1.5SMC62AT3G 1.5SMC82AT3 1.5SMC9.1AT3 1.5SMC91AT3 1.5SMC62AT3 1.5SMC16A 1.5SMC22A 1.5SMC24A 1.5SMC27A 1.5SMC43A 1.5SMC47A 1.5SMC51A 1.5SMC56A 1.5SMC68A 1.5SMC82A 1.5SMC15A 1.5SMC62A 1.5SMC75A 1.5SMC75AT3
OCR Text ...ts @ 1.0 ms ESD Rating of Class 3 (>16 kV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5.0 mA Above 10 V U...5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. INCHE...
Description Zener Diode
Transistor Suppressor
High Power
1500 Watt Peak Power Zener Transient Voltage Suppressors
ELR 2/1-230Z
1500 Watt Peak Power Zener Transient Voltage Suppressors 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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    2SA1037AKQLT1 2SA1037AKRLT1 2SA1037AKSLT1 2SA1037AK

Leshan Radio Company, Ltd.
乐山无线电股份有限公
Part No. 2SA1037AKQLT1 2SA1037AKRLT1 2SA1037AKSLT1 2SA1037AK
OCR Text 3 COLLECTOR 2SA1037AK*LT1 3 1 BASE 2 EMITTER 1 2 CASE 318-08, STYLE 6 MAXIMUM RATINGS Rating Collector-Emitter Voltage C...5m A) DC current transfer ratio (V CE = - 6 V, I C= -1mA) Transition frequency (V CE = - 12 V, I E= ...
Description General Purpose Transistors(PNP Silicon) 通用晶体管(民进党硅
Circular Connector; No. of Contacts:128; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:24; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:24-35 RoHS Compliant: No
Circular Connector; No. of Contacts:128; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:24; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:24-35 RoHS Compliant: No

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    2SB1181 2SB1260 2SB1241

ROHM[Rohm]
Part No. 2SB1181 2SB1260 2SB1241
OCR Text ..., IC=-1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !External dimensions (Units : mm) 2SB1260 ...5m IC Max. (Pulse) PW -1 IC Max. -0.5 DC Ta=25C Single nonrepetitive pulse * =1 0m ...
Description Power Transistor

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    2SD2439

SANKEN[Sanken electric]
Part No. 2SD2439
OCR Text ...ax 100max 150min 5000min 2.5max 3.0max 55typ 95typ V V MHz pF 16.2 B (7 0 ) E Silicon NPN Triple Diffused Planar Transistor (Co...5m A VCE( sat ) - IB Characteristics (Typical) 3 IC - V BE Temperature Characteristics (Typic...
Description Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

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    4N33 4N29 4N30 4N32 4N31

Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. 4N33 4N29 4N30 4N32 4N31
OCR Text ...ent Operating Temperature Range(3) Storage Temperature Range(3) Soldering Temperature (10 sec, 1/16 from case) VISO PD TA Tstg TL 7500 250 2...5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM...
Description STANDARD THRU HOLE CASE 730A-04

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...Units C/W www.irf.com 1 3/16/01 IRF1010E Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/...5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...x. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resist...5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H 2.92 (.115) 2.64 (.104) 3 O U T LIN E...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...-- --- --- --- 22 15 75 A 360 1.3 33 23 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS =...5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... = 20V --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die cont...5M , 1 982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H 2.92 (.115) 2.64 (.104) 3 O U T LIN E...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

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