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HuaXinAn Electronics CO.,LTD HuaXinAn Electronics CO...
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Part No. |
018-220 012-220 048-250 005-220 003-250 N68F N68FA
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OCR Text |
3 slim type and small occupying area can offer high density p .c.b. technique. employment of suitable plastic materials to be applied to high temperature and various chemical solution. dielectric strength 5000v.creepage distance >8mm. ord... |
Description |
Slim type and small occupying area can offer high density P.C.B. technique Slim type and small occupying area can offer high density P.C.B. technique.
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File Size |
482.29K /
1 Page |
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it Online |
Download Datasheet |
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GeneSiC Semiconductor, ...
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Part No. |
GAP05SLT80-220
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OCR Text |
... v r = 8000 v, t j = 25 c 3.8 a v r = 8000 v, t j = 125 c 5.3 total capacitance c v r = 1 v, f = 1 mhz, t j = 25 c 25 ...to make changes to the product specificat ions and data in this document without noti ce. genesic... |
Description |
Normally ?OFF Silicon Carbide Junction Transistor
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File Size |
197.90K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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