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20-200s Datasheet PDF File

For 20-200s Found Datasheets File :: 1546 Search Time::1.671ms
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				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS118D
OCR Text	...4 Jedec humidity category,J-STD-20-B IEC climatic category; DIN EN 60068-1 Thermal resistance junction - case: SMD: junction - ambient @ min...200s Parameter: TJstart 25 A ID(lim) -40C 15 25C 85C 10 5 150C 0 0 0....
Description	Smart Lowside Power Switch
File Size	331.57K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	...50 15 25 30 45 Relaxed value 60 20 40 60 20 40 40 55 2.4 New definition of the number of invalid blocks is added. (Minimum 1004 valid blocks...200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Dat...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	...YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F56XXX0B-DCB0/DIB0 63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm) - K9F5608U0B-V...200s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text	...axed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60 UNIT : ns tREA 30 60 tCEA 45 75 Sincerely, chwoosun@sec.sa...200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Dat...
Description	32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
File Size	653.97K / 39 Page	View it Online	Download Datasheet

				Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
Part No.	K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text	...B0/YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) FLASH MEMORY GENERAL DESCRIPTION The K9F5608U0M are a 32M(33,554,432)x8bit NAND Fl...200s and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page ...
Description	From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
File Size	350.10K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text	...B0/YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) FLASH MEMORY GENERAL DESCRIPTION The K9F5608U0A are a 32M(33,554,432)x8bit NAND Fl...200s and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page ca...
Description	32M x 8 Bit NAND Flash Memory
File Size	607.24K / 29 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGW25N120
OCR Text	...pul s VGE EAS tSC Ptot 84 84 20 130 10 313 V mJ s W VGE = 15V, 100V VCC 1200V, Tj 150C 1) Allowed number of short circuits: <10...200s 1ms 1A 60A TC=80C 40A TC=110C 20A DC 0.1A Ic 0A 10Hz 100Hz 1kHz 10kH...
Description	IGBTs & DuoPacks - 25A 1200V TO247AC IGBT Fast IGBT in NPT-technology TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC
File Size	375.62K / 11 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	AD823 AD823AN AD823AR AD823AR-REEL
OCR Text	...rtion -108 dBc Worst Harmonic @ 20 kHz Low Noise 16 nV/Hz @ 10 kHz No Phase Inversion with Inputs to the Supply Rails APPLICATIONS Battery P...200s The AD823 is a dual precision, 16 MHz, JFET input op amp that can operate from a single supp...
Description	Dual, 16 MHz, Rail-to-Rail FET Input Amplifier
File Size	430.59K / 16 Page	View it Online	Download Datasheet

				MA-Com MACOM[Tyco Electronics] Analog Devices, Inc.
Part No.	NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M NJM12904R NJM12904V PHA2731-190M
OCR Text	...ng 65 3.0 200 0.35 -10 to +100 -20 to +125 Units V V C C/W C C TC TSTG Electrical Specifications at 25C= = Symbol Pout Gp C RL Dro...200s Pulse, 10% Duty Amplifier in RF Test Fixture VCC PHA2731-190M RF IN RF OUT VCC ...
Description	Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
File Size	52.66K / 2 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGP20N60HS SGW20N60HS
OCR Text	...neon.com/igbt/ VCE 600V 600V IC 20 20 Eoff 240J 240J Tj 150C 150C Package TO220AB TO-247AC Ordering Code Q67040-S4498 Q67040-S4499 P-TO-220...200s 1A 1ms Ic Ic DC 0,1A 1V 100Hz 1kHz 10kHz 100kHz 10V 100V 1000V f...
Description	High Speed IGBT in NPT-technology
File Size	429.45K / 12 Page	View it Online	Download Datasheet

For 20-200s Found Datasheets File :: 1546 Search Time::1.671ms
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