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  2.25a Datasheet PDF File

For 2.25a Found Datasheets File :: 17966    Search Time::8.109ms    
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    SF164CS SF163CS SF165CS SF161CS SF166CS SF162CS

RECTRON[Rectron Semiconductor]
Part No. SF164CS SF163CS SF165CS SF161CS SF166CS SF162CS
OCR Text ... Mounting position: Any Weight: 2.2 grams .185 (4.70) .177 (4.50) .051 (1.29) .049 (1.25) .343 (8.70) .335 (8.50) .624 (15.84) .576...25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts. 3. Suffix "A" =Common Anode. @TC ...
Description GLASS PASSIVATED SUPER FAST RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 16 Amperes) 16 A, 300 V, SILICON, RECTIFIER DIODE

File Size 20.65K  /  2 Page

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    SF164C SF163C SF165C SF166C SF161C SF162C

RECTRON[Rectron Semiconductor]
Part No. SF164C SF163C SF165C SF166C SF161C SF162C
OCR Text ...) .148 (3.8) .053 (1.3) .047 (1.2) TO-220 MECHANICAL DATA * * * * * Case: TO-220 molded plastic Epoxy: Device has UL flammability cla...25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts. 3. Suffix "A" =Common Anode. @TC ...
Description GLASS PASSIVATED SUPER FAST RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 16 Amperes) 16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 24.57K  /  2 Page

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    SP6651A SP6651AER SP6651AEU_TR SP6651AER_TR SP6651AEU SP6651AEU/TR SP6651AER/TR SP6651AEU-L SP6651AEU-L/TR SP6651AER-L S

SIPEX[Sipex Corporation]
Part No. SP6651A SP6651AER SP6651AEU_TR SP6651AER_TR SP6651AEU SP6651AEU/TR SP6651AER/TR SP6651AEU-L SP6651AEU-L/TR SP6651AER-L SP6651AER-L/TR
OCR Text ...Possible 800mA Output Current 2.7V to 5.5V Input Voltage Range Output Adjustable Down to 1.0V No External FET's Required 1.25A Inductor Peak Current Limit 100% Duty Ratio Low Dropout Operation 80A Light Load Quiescent Current in Drop...
Description High Efficiency 800mA Synchronous Buck Regulator Ideal for portable designs powered with Li Ion battery
LJT 21C 21#16 PIN WALL RECP

File Size 157.51K  /  16 Page

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    Z00607DA Z00607DA1BA2 Z00607MA Z00607MA1BA2

ST Microelectronics
STMicroelectronics
Part No. Z00607DA Z00607DA1BA2 Z00607MA Z00607MA1BA2
OCR Text ...um values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=140 VD=12V ...25A/s IT= 200 mA Gate open IG= 1.2 IGT ITM= 1.1A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open (...
Description SENSITIVE GATE TRIACS

File Size 63.31K  /  4 Page

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    A3932 A3932SEQ 3932

ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
Part No. A3932 A3932SEQ 3932
OCR Text ...round, and thermal shutdown. 2 RESET 1 PGND 32 AGND 31 DEAD 3 GLC 30 REF 29 SENSE 28 RC 27 PWM 26 TACH 25 SR 24 BRAKE 23 D...25A for Gate Turn-On n Sinks 2.5A for Gate Turn-Off n Synchronous Rectification n Power MOSFET Prote...
Description    THREE PHASE POWER MOSFET CONTROLLER
From old datasheet system
DIODE MMBD4148 SOT-23

File Size 66.12K  /  8 Page

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    APT8030JVFR

ADPOW[Advanced Power Technology]
Part No. APT8030JVFR
OCR Text ...te layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Fast Recovery Body Diode * Lower Leakage * Faster Switching * 100% Ava...25A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V APT Re...
Description POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 69.94K  /  4 Page

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    APT8030JVR

ADPOW[Advanced Power Technology]
Part No. APT8030JVR
OCR Text ...te layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular SOT...25A j G L APT Reserves the right to change, without notice, the specifications and information co...
Description POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT8075BVFR

ADPOW[Advanced Power Technology]
Part No. APT8075BVFR
OCR Text ...lts Amps 800 12 48 30 40 260 2.08 -55 to 150 300 12 30 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Vo...25A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V. APT R...
Description POWER MOS V 800V 12A 0.750 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 69.90K  /  4 Page

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    BAT47 BAT48

STMICROELECTRONICS[STMicroelectronics]
Part No. BAT47 BAT48
OCR Text ... 1 0.5 0.75 0.9 1 10 4 20 10 30 2 15 5 25 25 50 A V Typ. Max. Unit V DYNAMIC CHARACTERISTICS Symbol C Tj = 25C VR = 0V Tj = 25C VR = 1V trr Tj = 25C IF = 10mA VR = 1V irr = 1mA RL = 100 Test Conditions f = 1MHz Min. Typ. 20 12 10 ns Max...
Description SMALL SIGNAL SCHOTTKY DIODE

File Size 93.94K  /  5 Page

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    BYW51-100 BYW51-150 BYW51-200 FN1374.PDF FN1412

INTERSIL[Intersil Corporation]
Part No. BYW51-100 BYW51-150 BYW51-200 FN1374.PDF FN1412
OCR Text 2 8A, 100V - 200V Ultrafast Dual Diodes The BYW51 series devices are low forward voltage drop, ultra-fast-recovery rectifiers (tRR < 35n...25A. 25 25 10 CURRENT iF A 8 8 1 (Note 1) 0 BYW51-100 MIN MAX 5 1 0.95 0.89 35 2.5 1.3 60 LIMITS BYW...
Description 25C 16 190/38 BC PVC,PVC
8A/ 100V - 200V Ultrafast Dual Diodes
8A, 100V - 200V Ultrafast Dual Diodes
From old datasheet system

File Size 24.36K  /  3 Page

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