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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8020LFLL APT8020B2FLL
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| OCR Text |
...
4 Starting Tj = +25C, L = 4.16mh, RG = 25, Peak IL = 38A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID38A di/dt 700A/s VR 800 TJ 150C 6 Eon includes diode reverse recovery. See fig... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
244.54K /
5 Page |
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MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Advanced Power Technolo...
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| Part No. |
APT8020LLL APT8020B2LL APT8020B2LL_04 APT8020B2LL04 APT8020B2LLG
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| OCR Text |
...
4 Starting Tj = +25C, L = 4.16mh, RG = 25, Peak IL = 38A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID38A di/dt 700A/s VR 800 TJ 150C 6 Eon includes diode reverse recovery. See fig... |
| Description |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 38; RDS(on) (Ohms): 0.2; BVDSS (V): 800;
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
156.54K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8028JVR
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| OCR Text |
...471 4 Starting T = +25C, L = 10.16mh, R = 25, Peak I = 16A j G L
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.3
, THERMAL IMPEDANCE (C/W)
D=0.5 0.1 0.2 0.05 0.1 0.0... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
67.96K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT8056BVFR_04 APT40M70LVR APT8056BVFR APT8056BVFR04
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| OCR Text |
...471 4 Starting T = +25C, L = 10.16mh, R = 25, Peak I = 16A j G L 5 I - -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0, dt
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse wi... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
58.12K /
4 Page |
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it Online |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT8075BVFR_05 APT8075BVFR APT8075BVFR05
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| OCR Text |
...3471 4 Starting T = +25C, L = 4.16mh, R = 25, Peak I = 25A j G L 5 I - -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0, dt
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse w... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
60.98K /
4 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI6N45 FQB6N45
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| OCR Text |
...mum junction temperature 2. L = 16mh, IAS = 6.2A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te... |
| Description |
450V N-Channel MOSFET
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| File Size |
581.35K /
9 Page |
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IRF[International Rectifier]
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| Part No. |
IRF7473PBF IRF7473PBF-15
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| OCR Text |
...ure.
Starting TJ = 25C, L = 16mh
RG = 25, IAS = 4.1A.
When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD 4.1A, di/... |
| Description |
Telecom and Data-Com 24 and 48V input DC-DC converters
HEXFET Power MOSFET
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| File Size |
123.80K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL3803VSPBF IRL3803VLPBF
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| OCR Text |
... 5 1560400 mJ IAS = 71A, L = 0.16mh
Typ. --- 0.028 --- --- --- --- --- --- --- --- --- --- --- 16 180 29 37
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current ... |
| Description |
HEXFET Power MOSFET
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| File Size |
267.04K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRL3803V
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| OCR Text |
.... 5 1560400 mJ IAS = 71A, L = 0.16mh
Typ. --- 0.028 --- --- --- --- --- --- --- --- --- --- --- 16 180 29 37
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current ... |
| Description |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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| File Size |
131.97K /
8 Page |
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SEMIWELL[SemiWell Semiconductor]
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| Part No. |
SFP640
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| OCR Text |
...m junction temperature 2. L = 1.16mh, IAS = 18A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 18A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temp... |
| Description |
N-Channel MOSFET
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| File Size |
849.27K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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