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  140.0mhz Datasheet PDF File

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...110 170 IC = 13A, VCC = 480V 91 140 VGE = 15V, RG = 10 0.56 -- Energy losses include "tail" 0.28 -- mJ and diode reverse recovery 0.84 1.1 S...0MHz 42 60 ns TJ = 25C See Fig. 14 IF = 15A 74 120 TJ = 125C 4.0 6.0 A TJ = 25C See Fig. 15 VR = 200...
Description IGBT SIP MODULE

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    IDT54FCT162646AT IDT54FCT162646ATE IDT54FCT162646ATEB IDT54FCT162646ATPA IDT54FCT162646ATPAB IDT54FCT162646ATPF IDT54FCT

IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Integrated Device Techn...
Part No. IDT54FCT162646AT IDT54FCT162646ATE IDT54FCT162646ATEB IDT54FCT162646ATPA IDT54FCT162646ATPAB IDT54FCT162646ATPF IDT54FCT162646ATPFB IDT54FCT162646ATPV IDT54FCT162646ATPVB IDT54FCT162646CT IDT54FCT162646CTE IDT54FCT162646CTEB IDT54FCT162646CTPA IDT54FCT162646CTPAB IDT54FCT162646CTPF IDT54FCT162646CTPFB IDT54FCT162646CTPV IDT54FCT162646CTPVB IDT54FCT162646ET IDT54FCT162646ETE IDT54FCT162646ETEB IDT54FCT162646ETPA IDT54FCT162646ETPAB IDT54FCT162646ETPF IDT54FCT162646ETPFB IDT54FCT162646ETPV IDT54FCT162646ETPVB IDT54FCT162646T IDT54FCT162646TE IDT54FCT162646TEB IDT54FCT162646TPA IDT54FCT162646TPAB IDT54FCT162646TPF IDT54FCT162646TPFB IDT54FCT16646TPVB IDT54FCT162646TPV IDT54FCT162646TPVB IDT54FCT16646AT IDT54FCT16646ATE IDT54FCT16646ATEB IDT54FCT16646ATPA IDT54FCT16646ATPAB IDT54FCT16646ATPF IDT54FCT16646ATPFB IDT54FCT16646ATPV IDT54FCT16646ATPVB IDT54FCT16646CT IDT54FCT16646CTE IDT54FCT16646CTEB IDT54FCT16646CTPA IDT54FCT16646CTPAB IDT54FCT16646CTPF IDT54FCT16646CTPFB IDT54FCT16646CTPV IDT54FCT16646CTPVB IDT54FCT16646ET IDT54FCT16646ETEB IDT54FCT16646ETPA IDT54FCT16646ETPAB IDT54FCT16646ETPF IDT54FCT16646ETPFB IDT54FCT16646ETPV IDT54FCT16646ETPVB IDT54FCT16646T IDT54FCT16646TE IDT54FC
OCR Text ... -- -- -- -- -- -- -- -- -0.7 -140 Max. -- Unit V V A 0.8 1 1 1 1 1 1 -1.2 -225 -- pins)(5) pins)(5) High Impedance Out...0MHz; tF 2.5ns; tR 2.5ns 5.13 8 IDT54/74FCT16646T/AT/CT/ET, 162646T/AT/CT/ET FAST CMOS 16...
Description    FAST CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS (3-STATE)
CAP 33UF 6V 20% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-4000
CAP 4.7UF 16V 10% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-3000
CAP 4.7UF 16V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3000
CAP 4.7UF 16V 20% TANT SMD-3528-12 TR-7-PL GOLD LOWESR-3000
CAP 4.7UF 16V 20% TANT SMD-3528-12 TR-7-PL SN/PB5% LOWESR-3000
CAP 33UF 4V 10% TANT SMD-3528-12 TR-7-PL SN100% LOWESR-3500
CAP 10UF 25V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-400
FAST CMOS 16-BIT BUS TRANSCEIVER/ REGISTERS (3-STATE) 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 25V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 50V 20% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-700 快速CMOS 16位总线收发寄存器(3态)
CAP 100UF 6V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-150 快速CMOS 16位总线收发寄存器(3态)
CAP 10UF 35V 20% TANT SMD-7343-31 TR-7-PL GOLD LOWESR-400 快速CMOS 16位总线收发寄存器(3态)

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    IDT71342SA20J IDT71342SA20PF IDT71342SA25J IDT71342SA25PF IDT71342SA35J IDT71342SA35PF IDT71342SA45J IDT71342SA45PF IDT7

Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Part No. IDT71342SA20J IDT71342SA20PF IDT71342SA25J IDT71342SA25PF IDT71342SA35J IDT71342SA35PF IDT71342SA45J IDT71342SA45PF IDT71342SA55J IDT71342SA55PF IDT71342SA70J IDT71342SA70PF IDT71342LA70PF IDT71342SA IDT7134 IDT71342LA70J IDT71342LA55J IDT71342LA55PF IDT71342LA35J IDT71342LA35PF IDT71342 IDT71342LA IDT71342LA20J IDT71342LA20PF IDT71342LA25J IDT71342LA25PF IDT71342LA45J IDT71342LA45PF
OCR Text ...- -- 185 155 -- -- 170 140 -- -- 170 140 -- -- 170 140 mA ISB1 Outputs Open L SEM < VIL f = fMAX(3) CEL and CER = VIH COM'L. S SEML = SEMR > VIH L f = fMAX(3) 25 25 -- -- 80 80 180 150 25 25 -- -- 8...
Description HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE 高K的8双端口静态RAM的信号量
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE 4K X 8 DUAL-PORT SRAM, 45 ns, PQFP64
350V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail

File Size 144.80K  /  13 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ... --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0MHz, See Fig. 5 1180320 mJ IAS = 50A, L = 260H Typ. --- 0.064 --- --- --- --- --- --- --- --- --- --- 12 78 48 53 D S Source-Drain Ratings and Characteristics IS ISM VSD trr ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ... --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0MHz, See Fig. 5 1180320 mJ IAS = 50A, L = 260H Typ. --- 0.064 --- --- --- --- --- --- --- --- --- --- 12 78 48 53 D S Source-Drain Ratings and Characteristics IS ISM VSD trr ...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ... --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0MHz, See Fig. 5 1030250 mJ IAS = 4.3A, L = 270H Typ. --- 0.058 --- --- --- --- --- --- --- --- --- --- 13 76 39 48 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0MHz, See Fig. 5 1030250 mJ IAS = 4.3A, L = 270H Typ. --- 0.058 --- --- --- --- --- --- --- --- --- --- 13 76 39 48 D S Source-Drain Ratings and Characteristics IS ISM VSD trr...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...ak IRF1010ZS Max. 94 66 75 360 140 0.90 20 TO-262 IRF1010ZL Units A Absolute Maximum Ratings Parameter ID @ TC = 25C Continuous D...0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V f ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1104 5...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...0 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF130...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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