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  13500 Datasheet PDF File

For 13500 Found Datasheets File :: 196    Search Time::2.516ms    
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    FLK027WG

Eudyna Devices Inc
Part No. FLK027WG
OCR Text ...0 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 S11 MAG .985 .965 .819 .804 .787 .766 .735 .689 .623 .534 .423 .290 .139 .036 .223 .395 .542 .652 .734 ANG -31.8 -60.1 165.4 159.8 155.0 150.1 144.2 137.4 128.7 118...
Description X, Ku Band Power GaAs FET

File Size 79.11K  /  4 Page

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    MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Part No. APT14050JVFR
OCR Text ...RG = 0.6 MIN TYP MAX UNIT pF 13500 1150 600 820 55 375 20 18 110 20 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS S...
Description 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET

File Size 131.64K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT58M50J
OCR Text ...Charge Related Min Typ 65 13500 185 1455 845 Max Unit S pF 5 VGS = 0V, VDS = 0V to 333V Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current R...
Description N-Channel MOSFET

File Size 262.29K  /  4 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT84M50L APT84M50B2
OCR Text ...Charge Related Min Typ 65 13500 185 1455 845 Max Unit S pF 5 VGS = 0V, VDS = 0V to 333V Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current R...
Description N-Channel MOSFET

File Size 390.13K  /  4 Page

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    EIC[EIC discrete Semiconductors]
Part No. BZW50-82B BZW50 BZW50-10 BZW50-100 BZW50-100B BZW50-10B BZW50-12 BZW50-120 BZW50-120B BZW50-12B BZW50-15 BZW50-150 BZW50-150B BZW50-15B BZW50-18 BZW50-180 BZW50-180B BZW50-18B BZW50-22 BZW50-22B BZW50-27 BZW50-27B BZW50-33 BZW50-33B BZW50-39 BZW50-39B BZW50-47 BZW50-47B BZW50-56 BZW50-56B BZW50-68 BZW50-68B BZW50-82
OCR Text ...8 23 19 16 (pF) 24000 18500 13500 1150 8500 7000 5750 4800 4100 3400 3000 2600 2300 1900 1700 1500 Notes: (1) Pulse test : tp < 50 ms. (2) VBR = T * (Ta - 25) * VBR (25C) (3) VR = 0V, f = 1MHz. For Bidirectional types, capacitance ...
Description TRANSIENT VOLTAGE SUPPRESSOR

File Size 43.93K  /  3 Page

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    CYPRESS[Cypress Semiconductor]
Cypress Semiconductor, Corp.
Part No. CY62147CV18LL-70BVI CY62147CV18 CY62147CV18LL-55BAI CY62147CV18LL-55BVI CY62147CV18LL-70BAI CY62147CV18LL-70BKI
OCR Text ...arameters R1 R2 RTH VTH 1.8V 13500 10800 6000 0.80 UNIT Ohms Ohms Ohms Volts Data Retention Characteristics (Over the Operating Range) Parameter VDR ICCDR tCDR[5] tR[6] Description VCC for Data Retention Data Retention Current Chi...
Description 256K x 16 Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 70 ns, PBGA48

File Size 271.39K  /  12 Page

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    CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Part No. CY62157CV18LL-70BAI CY62157CV18 CY62157CV18LL-55BAI
OCR Text ...arameters R1 R2 RTH VTH 1.8V 13500 10800 6000 0.80 Unit Ohms Ohms Ohms Volts Data Retention Characteristics (Over the Operating Range) Parameter VDR ICCDR Description VCC for Data Retention Data Retention Current VCC= 1.0V CE1...
Description Memory : MicroPower SRAMs
512K x 16 Static RAM

File Size 263.89K  /  11 Page

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    Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
Part No. CY62157DV18LL-70BVI CY62157DV18 CY62157DV18L-55BVI CY62157DV18L-70BVI CY62157DV18LL-55BVI
OCR Text ...ameters R1 R2 R TH VT H 1.8V 13500 10800 6000 0.80 UNIT V Data Retention Characteristics Parameter VDR ICCDR tCDR[6] tR[7] Description VCC for Data Retention Data Retention Current VCC = 1.0V, CE1 > VCC - 0.2V, CE2 L < 0.2V, VI...
Description 8M (512K x 16) Static RAM
Packages offered in a 48-ball FBGA

File Size 158.52K  /  10 Page

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    DYNEX[Dynex Semiconductor]
Part No. DG858BW45
OCR Text ...100 50 1.2 4.0 50 2700 2.0 6.0 13500 Units V mA mA V A mA mJ s s mJ s s s C C A On-state voltage Peak off-state current Peak reverse current Gate trigger voltage At 4000A peak, IG(ON) = 10A d.c. VDRM = 4500V, VRG = 0V At VRRM VD ...
Description Gate Turn-off Thyristor

File Size 226.18K  /  19 Page

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    DYNEX[Dynex Semiconductor]
Part No. DIM2400ESS12-A000 DIM2400ESS12 DYNEXSEMICONDUCTORLTD-DIM2400ESS12-A000
OCR Text ...0747-9 I1 I2 - 10 0.09 16500 13500 Note: Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handl...
Description Single Switch IGBT Module

File Size 810.23K  /  9 Page

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