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100a Datasheet PDF File

For 100a Found Datasheets File :: 33769 Search Time::1.281ms
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				Microsemi Corporation
Part No.	APTM50DHM35G
OCR Text	... Test Conditions VR=600V IF = 100a IF = 200A IF = 100a IF = 100a VR = 400V di/dt = 200A/s Min 600 Tj = 25C Tj = 125C Tc = 60C Typ Max 250 500 Unit V A A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 100 1.6 1.9 1.4 18...
Description	Asymmetrical - bridge MOSFET Power Module
File Size	276.01K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTM50DHM35
OCR Text	... Conditions 50% duty cycle IF = 100a IF = 200A IF = 100a IF = 100a VR = 400V di/dt = 200A/s IF = 100a VR = 400V di/dt = 200A/s Min Tc = 80C Typ 100 1.6 1.9 1.4 180 220 390 1450 Max 1.8 V Unit A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = ...
Description	Asymmetrical - Bridge MOSFET Power Module
File Size	288.41K / 6 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTM50DHM38G
OCR Text	... Test Conditions VR=600V IF = 100a IF = 200A IF = 100a IF = 100a VR = 400V di/dt = 200A/s Tj = 25C Tj = 125C Tc = 80C Min 600 Typ Max 250 500 Unit V A A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 100 1.6 1.9 1.4 180...
Description	Asymmetrical - bridge MOSFET Power Module
File Size	276.14K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...ID = 1mA 0.004 VGS = 10V, ID = 100a 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 100a 20 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 175C 200 VGS = 20V nA -200 VGS = -20V 260 ID = 100a 63 nC VDS = 32V 59 VGS = 10V, See Fig. 6 ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTM50DHM38
OCR Text	... Conditions 50% duty cycle IF = 100a IF = 200A IF = 100a IF = 100a VR = 400V di/dt = 200A/s IF = 100a VR = 400V di/dt = 200A/s Min Tc = 80C Typ 100 1.6 1.9 1.4 180 220 390 1450 Max 1.8 V Unit A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = ...
Description	Asymmetrical - Bridge MOSFET Power Module
File Size	290.05K / 6 Page	View it Online	Download Datasheet

				Avic Technology
Part No.	AV9012
OCR Text	...-1.4 V V V Test conditions Ic= -100a IE=0 Ic= -0. 1 mA IB=0 IE= -100a IC=0 VCB=-40 V IE=0 VCE=- 20 V IB=0 VEB= - 5 V IC=0 VCE= -1 V, IC= -50 mA 64 MIN -40 -25 -5 -0.1 -0.2 -0.1 300 MAX UNIT V V V A A A Transition frequency fT f ...
Description	TO-92 Plastic-Encapsulate Transistors
File Size	149.85K / 2 Page	View it Online	Download Datasheet

				CHERRY[Cherry Semiconductor Corporation]
Part No.	CS8271 CS8271YN8 CS8271YD8 CS8271YDR8
OCR Text	...iescent current (60A typical at 100a load). The output supplies 100mA of load current with a maximum dropout voltage of only 600mV. Control logic includes ENABLE . The combination of low quiescent current, outstanding regulator performance ...
Description	Adjustable Micropower Low Dropout Linear Regulator with ENABLE
File Size	155.15K / 6 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4918 AO4918L
OCR Text	..., RL=1.6, RGEN=3 IF=9.3A, dI/dt=100a/s IF=9.3A, dI/dt=100a/s 8.2 54.5 10.5 23.5 13.3 9 12 75 15 28 16 1.1 37 14.5 19 16 1.1 Min 30 0.007 0.05 3.2 12 10 20 100 2 mA nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC Typ Max Units V STATIC...
Description	Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	144.82K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4916A AO4916AL
OCR Text	..., RL=1.8, RGEN=3 IF=8.5A, dI/dt=100a/s IF=8.5A, dI/dt=100a/s 6 19 4.5 20 9.5 6.5 7.5 25 6 24 12 0.85 24 12 1250 17 27 27 1.7 Min 30 0.007 0.05 3.2 12 10 20 100 3 mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC Typ Max Units V ...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
File Size	138.42K / 8 Page	View it Online	Download Datasheet

				TY Semicondutor
Part No.	AOTF10N50FD
OCR Text	... recovery charge i f =10a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery time i f =10a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air envi...
Description	Single N -Channel MOSFET
File Size	747.29K / 6 Page	View it Online	Download Datasheet

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