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  100-120v Datasheet PDF File

For 100-120v Found Datasheets File :: 3455    Search Time::1.406ms    
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    2SA1018 2SC1473

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1018 2SC1473
OCR Text ...(Ta=25C) Ratings -250 -200 -5 -100 -70 750 150 -55 ~ +150 Unit V V V mA mA mW C C 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +...120V, IB = 0, Ta = 60C IC = -100A, IB = 0 IE = -1A, IC = 0 VCE = -10V, IC = -5mA IC = -50mA, IB = -5...
Description Silicon PNP epitaxial planer type

File Size 35.59K  /  2 Page

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    2SA1038S 2SA1579 2SA1514K

Rohm Co., Ltd.
ROHM[Rohm]
Part No. 2SA1038S 2SA1579 2SA1514K
OCR Text ... -12.5 -4 -10.0 -7.5 100 -2 -5.0 -2.5A IB=0 50 0 -4 -8 -12 -16 -20 -0.2 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) ...
Description ER 3C 3#12 PIN PLUG
High-voltage Amplifier Transistor (−120V/ −50mA)
High-voltage Amplifier Transistor (-120V, -50mA)
High-voltage Amplifier Transistor (−120V −50mA)
High-voltage Amplifier Transistor (−120V, −50mA)

File Size 65.63K  /  4 Page

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    2SA985

WINGS[Wing Shing Computer Components]
Part No. 2SA985
OCR Text ...VCE=- 5V , IC=-0.5A Min Typ Max 100 100 150 -1.5 180 V MHZ Unit A A Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

File Size 69.02K  /  1 Page

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    2SA986A

WINGS[Wing Shing Computer Components]
Part No. 2SA986A
OCR Text ...5A Min Typ Max -10 -10 340 -1.5 100 Unit A A 70 V MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

File Size 64.81K  /  1 Page

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    2SB631 2SB631K 2SD600 2SD600K

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SB631 2SB631K 2SD600 2SD600K
OCR Text ... * High breakdown voltage VCEO 100/120V, High current 1A. * Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDE...
Description NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ..., (Figure 7) 8.1 6.5 - 100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 4.1A, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) VGS = 10V, ID = 8.1A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA, (Figures 14, 19, 20) Gat...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...) x rDS(ON)MAX, VGS = 10V 14 13 100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 8A, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA, (Figures 14, 19, 20) ...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...VDS = 120V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V 95 ID = 12A 11 nC VDS = 120V 47 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V --- ID = 12A ns --- RG = 5.1 --- RD = 5.9, See Fig. 10 Between lead, nH --- and center of die cont...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...VDS = 120V, VGS = 0V, TJ = 125C 100 VGS = 20V nA -100 VGS = -20V 95 ID = 12A 11 nC VDS = 120V 47 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V --- ID = 12A ns --- RG = 5.1 --- RD = 5.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from p...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ...VDS = 120V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 200 ID = 22A 17 nC VDS = 120V 98 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V --- ID = 22A ns --- RG = 2.5 --- RD = 3.3, See Fig. 10 Between lead, nH --- and center of die co...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 152.65K  /  10 Page

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