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  1.9-2.0ghz Datasheet PDF File

For 1.9-2.0ghz Found Datasheets File :: 955    Search Time::2.547ms    
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    TMD1013-1-431

Toshiba Semiconductor
Part No. TMD1013-1-431
OCR Text 1-431 FEATURES n HIGH POWER P1dB=33.0dBm at 9.5GHz to 12.0GHz n HIGH GAIN G1dB=25.0dB at 9.5GHz to 12.0GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain Supp...
Description MICROWAVE POWER MMIC AMPLIFIER

File Size 41.01K  /  2 Page

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    MS-156R-HRMJ-1 MS-156-HRMJ-10 MS-156-HRMJ-12 MS-156-HRMJ-14 MS-156-HRMJ-3 MS-156LP-HRMJ-8 MS-156-HRMJ-H1

Hirose Electric
Part No. MS-156R-HRMJ-1 MS-156-HRMJ-10 MS-156-HRMJ-12 MS-156-HRMJ-14 MS-156-HRMJ-3 MS-156LP-HRMJ-8 MS-156-HRMJ-H1
OCR Text 1.2017 copyright 2017 hirose electric co., ltd. all rights reserved. 1 subminiature coaxial switch 1.35 mm high, dc to 11 ghz ms-156c seri...9 db max. (6.0ghz to 8.0ghz) isolation 20 db min.(dc to 3.0ghz) 15 db min.(3.0ghz to 6.0ghz) 12 db ...
Description Subminiature Coaxial Switch 1.35 mm High, DC to 11 GHz

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    EIM0618-1

Excelics Semiconductor, Inc.
Part No. EIM0618-1
OCR Text 1 UPDATED 07/18/2006 6.0 - 18.0 GHz 1-Watt Power Module FEATURES * * * * * 6.0 - 18.0 GHz Bandwidth Input/Output Impedance Matched t...9 8 7 6 18.0 10.0 12.0 14.0 16.0 Frequency (GHz) ORDERING INFORMATION Part Number ...
Description 6.0 - 18.0 GHz 1-Watt Power Module

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    TGA2576-2-FL TGA2576-2-FL-15

TriQuint Semiconductor
Part No. TGA2576-2-FL TGA2576-2-FL-15
OCR Text 1 of 11 - disclaimer: subject to change without notice ? 2015 triquint www.triquint.com applications ?...9 n/c 3 rf in 6 , 10 v d 8 rf out t ga2576 - 2 - f l 2.5 to 6ghz 40 w gan...
Description 2.5 to 6GHz 40W GaN Power Amplifier

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    MS-156-HRMJ-2 MS-156-HRMJ-3 MS-156-HRMJ-5 MS-156-HRMJ-6 MS-156LP-HRMJ-1 MS-156 MS-156_02 MS-156-C_LP-1 MS-156-C_LP-2 MS-

HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
Part No. MS-156-HRMJ-2 MS-156-HRMJ-3 MS-156-HRMJ-5 MS-156-HRMJ-6 MS-156LP-HRMJ-1 MS-156 MS-156_02 MS-156-C_LP-1 MS-156-C_LP-2 MS-156-HRMJ-9 MS-156-CLP-1 MS-156-CLP-2 MS-15602
OCR Text 1.6 mm High, DC to 6 GHz MS-156 Series sOverview Developed for inspection of high frequency circuits used in portable terminals.Verificati...9 2-2.65 N.C 0.3 0.55 4 2 1.4 BPackaging Specifications qEmbossed Carrier Tape Di...
Description Subminiature Coaxial Switch 1.6 mm High, DC to 6 GHz 微型同轴开.6毫米高,直流6GHz
Subminiature Coaxial Switch 1.6 mm High, DC to 6 GHz 微型同轴开1.6毫米高,直流GHz

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    TIM1415-2

Toshiba Semiconductor
Part No. TIM1415-2
OCR Text ... TYP. MAX. 33.5 6.0 0.85 22 1.1 60 VDS= 9V f= 14.5 to 15.0GHz add Tch (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended gate r...9.70.3 (3) Drain TIM1415-2 RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=...
Description MICROWAVE POWER GaAs FET

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    EUDYNA[Eudyna Devices Inc]
Part No. FMM5811GJ-1
OCR Text 1 17.7-23.6GHz Power Amplifier MMIC FEATURES * * * * * * High Output Power: P1dB = 24.5dBm (Typ.) High Gain: G1dB = 15dB (Typ.) High PA...9 174.2 173.9 172.8 170.0 168.0 165.3 162.1 159.8 156.8 154.4 151.9 149.2 146.9 144.0 141.4 138.5 13...
Description Amplifier. Other
17.7-23.6GHz Power Amplifier MMIC

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    FLL200IB-1 FLL200IB-2 FLL200IB-3

Eudyna Devices Inc
Part No. FLL200IB-1 FLL200IB-2 FLL200IB-3
OCR Text 1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES * * * * * High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB ...9 1.8 0.06 +j10 1 1GHz 1GHz 2.5 1.3 1.1 1.2 0 2 1.9 1.8 10 25 50 1.5 1.4 ...
Description L-Band Medium & High Power GaAs FET

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    FMM5805GJ-1

List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
Part No. FMM5805GJ-1
OCR Text 1 17.7-19.7GHz Power Amplifier MMIC FEATURES * High Output Power: P1dB = 31.0dBm(Typ.) * High Gain: G1dB = 20.0dB(Typ.) * High PAE: ad...9 115.6 114.3 113.3 112.1 110.8 109.8 108.2 106.3 103.1 99.4 95.7 91.3 87.0 82.4 76.7 70.0 58.2 -107...
Description 17700 MHz - 19700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.7-19.7GHz Power Amplifier MMIC

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    Inchange Semiconductor ...
Part No. MMBR941L
OCR Text 1 isc silicon npn rf transistor mmbr941l description low...9 2.8 db inchange semiconductor isc rf pr...
Description isc Silicon NPN RF Transistor

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