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Silicon Storage Technology, Inc.
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Part No. |
SST29VE010-120-3I-EH SST29LE010-90-4C-N SST29VE010-90-4C-N SST29LE010-90-3I-E SST29VE010-90-3I-E SST29LE010-90-3I-EH SST29VE010-90-3I-EH SST29LE010-90-4I-E SST29VE010-90-4I-E SST29LE010-150-3C-W SST29LE010-250-3C-E SST29LE010-250-3C-U SST29LE010-250-3C-W SST29LE010-250-3C-N SST29LE010-250-3C-P SST29VE010-250-3C-NH SST29LE010-250-3C-NH SST29LE010-120-4I-W SST29LE010-250-4I-W SST29LE010-150-4I-W SST29LE010-200-4I-W SST29LE010-90-4I-W SST29VE010-120-3I-P SST29VE010-200-3I-P SST29VE010-120-3I-WH SST29LE010-90-3I-P SST29LE010-250-3I-P SST29LE010-150-3I-W SST29LE010-200-3I-W SST29VE010-200-3I-W SST29LE010-200-3I-P SST29VE010-250-3I-W SST29VE010-90-4I-W SST29LE010-150-3I-P SST29VE010-150-3I-P SST29VE010-150-3I-W SST29VE010-250-3I-P SST29VE010-90-3I-W SST29VE010-200-3I-E SST29VE010-90-3I-P SST29LE010-250-3I-W SST29LE010-90-3I-W SST29VE010-90-3C-W SST29LE010-250-3C-UH SST29VE010-120-3I-PH SST29LE010-90-3C-U SST29VE010-90-3C-U SST29LE010-90-3C-UH SST29VE010-90-3C-UH SST29VE010-120-3C-UH SST29VE010-200-3C-UH SST29VE010-120-3C-E SST29VE010-250-3C-E SST29LE010-90-3I-NH SST29LE010-150-3I-NH SST29LE010-200-3I-NH SST29LE010-250-3I-NH SST29VE010-120-3I-NH SST29VE010-90-3I-UH SST29VE010-120-3I-UH SS
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OCR Text |
1 Megabit (128K x 8) Page Mode EEPROM
SST29EE010, SST29LE010, SST29VE010
Data Sheet
FEATURES: * Single Voltage Read and Write Operations - 5.0V-only for the 29EE010 - 3.0V-only for the 29LE010 - 2.7V-only for the 29VE010 * Superior Relia... |
Description |
Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 800; Vio (mV) max: 4; SR (V/µs) typ: 8; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 200; Vio (mV) max: 4; SR (V/µs) typ: 2; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Push-pull type CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 800; Vio (mV) max: 4; SR (V/µs) typ: 8; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 15; Vio (mV) max: 4; SR (V/µs) typ: 0.125; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: No error against RF noise Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: DIP; Pin count: 8; Remarks: No error against RF noise CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 15; Vio (mV) max: 4; SR (V/µs) typ: 0.125; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 100; Vio (mV) max: 4; SR (V/µs) typ: 1; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 4; SR (V/µs) typ: 0.5; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 200; Vio (mV) max: 4; SR (V/µs) typ: 2; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 400; Vio (mV) max: 4; SR (V/µs) typ: 4; Topr (°C): -40 to 85; Package: MMPAK; Pin count: 8; Remarks: Output full swing High slew rate Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type CMOS Operational Amplifier Output full swing,High slew rate; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 400; Vio (mV) max: 4; SR (V/µs) typ: 4; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing High slew rate CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 4; SR (V/µs) typ: 0.5; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard CMOS Operational Amplifier Output full swing, Standard; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 100; Vio (mV) max: 4; SR (V/µs) typ: 1; Topr (°C): -40 to 85; Package: TSSOP; Pin count: 8; Remarks: Output full swing Standard Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Open drain type Single (Low Consumption) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 5; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Open drain type Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Open drain type Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: MPAK-5V; Remarks: Push-pull type 1 Megabit (128K x 8) Page Mode EEPROM 1兆位128K的8)页模式EEPROM Single (High SR) Operational Amplifier; VDD (V): 1.8 to 5.5; IDD/ch (µA) typ.: 50; Vio (mV) max: 5; Topr (°C): -40 to 85; Package: CMPAK-5V; Remarks: Push-pull type 1兆位28K的8)页模式的EEPROM Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise 1兆位28K的8)页模式的EEPROM 1 Megabit (128K x 8) Page Mode EEPROM 1兆位28K的8)页模式的EEPROM 1 Megabit (128K x 8) Page Mode EEPROM 1兆位28K的8)页模式EEPROM Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: SOP; Pin count: 8; Remarks: No error against RF noise 1兆位28K的8)页模式EEPROM Logic IC; Function: Quad. Differential Line Receivers with 3-state outputs (EIA RS-422A, 423A); Package: DIP; Remarks: Interface IC 1兆位28K的8)页模式的EEPROM 1 Megabit (128K x 8) Page Mode EEPROM 1兆位128K的8)页模式的EEPROM Bipolar Voltage Comparator; Vio (mV) max: 7; Topr (°C): -40 to 85; Package: DIP; Pin count: 8; Remarks: No error against RF noise
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File Size |
893.50K /
27 Page |
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it Online |
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ATMEL[ATMEL Corporation]
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Part No. |
AT91FR4042-CI AT91FR4042
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OCR Text |
...al Frequency Range at VDDCORE = 1.65V, 85C 2.7V to 3.6V I/O and Flash Operating Range, 1.65V to 1.95V Core Operating Range -40C to 85C Tempe...megabit (256 K x 16/512 K x 8) Single 2.7 Volt Flash Memory Datasheet
4
AT91FR4042
2648D-ATAR... |
Description |
AT91 ARM Thumb Microcontrollers
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File Size |
149.74K /
22 Page |
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it Online |
Download Datasheet |
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ATMEL[ATMEL Corporation]
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Part No. |
AT52BC3221AT-70CI AT52BC3221A AT52BC3221A-70CI AT52BC3221AT
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OCR Text |
1.2 mm) CBGA Package * 2.7V to 3.3V Operating Voltage
Flash
* * * * * *
32-megabit (2M x 16) 2.7V to 3.3V Read/Write Access Time - 70 ns Sector Erase Architecture - Sixty-three 32K Word Sectors with Individual Write Lockout - Eight 4K ... |
Description |
32-Mbit Flash 8-Mbit PSRAM Stack Memory
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File Size |
407.90K /
36 Page |
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it Online |
Download Datasheet |
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ATMEL CORP
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Part No. |
AT49BV640-85TI
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OCR Text |
1 features ? 64-megabit (4m x 16) flash memory 2.7v - 3.6v read/write high performance C asynchronous access time C 70 ns C page mode read time C 20 ns sector erase architecture C eight 4k word sectors with individual write lockout C ... |
Description |
4M X 16 FLASH 2.7V PROM, 85 ns, PDSO48
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File Size |
396.43K /
30 Page |
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it Online |
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Maxwell Technologies, Inc
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Part No. |
29F0408 29F0408RPFB
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OCR Text |
...ng-gate technology - Endurance: 1,000,000 program/erase cycles - Data retention: 10 years * Command register operation * 44 pin flat package...Megabit (4M x 8-Bit) Flash Memory
29F0408
TABLE 1. PINOUT DESCRIPTION
PIN 2 SYMBOL Command La... |
Description |
32 Megabit (4M x 8-Bit) Flash Memory 4M X 8 FLASH 5V PROM, 35 ns, DFP44
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File Size |
843.52K /
32 Page |
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it Online |
Download Datasheet |
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Price and Availability
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