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				NEC[NEC] NEC Corp.
Part No.	2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text	...new fabrication technique. 1.6 0.1 1.0 PACKAGE DIMENSIONS in milimeters 1.6 0.1 0.8 0.1 2 0.2+0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05...740 .698 .650 .607 .560 .513 .471 .430 .395 .361 .330 .300 .274 .250 .226 .208 .188 .170 .151 .136 ....
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
File Size	57.57K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text	...Gain * Low Voltage Operation 2.0 0.2 0.60 0.65 PACKAGE DIMENSIONS in millimeters 0.3 +0.1 -0.05 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05...740 .737 .733 .737 .733 S21 ANG -39.1 -72.2 -96.9 -115.5 -130.5 -141.5 -151.7 -159.0 -165.6 -172...
Description	NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	50.99K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text	...h Gain * Low Voltage Operation 0.3 +0.1 -0.05 PACKAGE DIMENSIONS in millimeters 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) (...740 .673 .628 .570 .525 .476 .444 .414 .382 .362 .347 .331 .323 .325 .311 .299 .316 .303 .311 .308 ....
Description	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	51.33K / 8 Page	View it Online	Download Datasheet

				DYNEX SEMICONDUCTOR LTD DYNEX[Dynex Semiconductor]
Part No.	DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG
OCR Text	0 DS4168-4.0 August 2001 FEATURES s Double Side Cooling s High Surge Capability KEY PARAMETERS VRRM 4000V IF(AV) 1121A IFSM 15000A ...740 A A A 2/7 www.dynexsemi.com DS1107SG SURGE RATINGS Symbol IFSM I2t IFSM I2t Paramet...
Description	Rectifier Diode
File Size	96.08K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	... VDSS = 500V G S RDS(on) = 0.85 ID = 8.0A Description This new series of low charge HEXFET(R) power MOSFETs achieve significant low...740 ns TJ = 25C, IF = 8.0A --- 3.0 4.5 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	IRF9140
OCR Text	0.675) 16.64 (0.655) P-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES * HERMETICALLY SEALED TO-3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0...
Description	P-CHANNEL POWER MOSFET
File Size	21.26K / 2 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	M74HCU04B1R M74HCU04C1R M74HCU04M1R M54HCU04K1 M54HCU04 M54HCU04D M54HCU04D1 M54HCU04F1R M54HCU04K M74HCU04
OCR Text	...ature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 25 50 300 -65 to +150 265 Unit V V V mA mA mA mA mW ...740 0.290 0.035 0.080 0.018 0.010 0.748 0.300 0.100 0.600 0.310 0.605 0.320 0.305 0.146 0.476 0.059 ...
Description	RAD HARD HEX INVERTER (SINGLE STATE) HEX INVERTER SINGLE STAGE
File Size	101.36K / 8 Page	View it Online	Download Datasheet

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