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				International Rectifier
Part No.	IRF7726PBF IRF7726PBF-15
OCR Text	...ET VDSS -30V RDS(on) max 0.026@VGS = -10V 0.040@VGS = -4.5V ID -7.0A -6.0A Description HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic...
Description	Ultra Low On-Resistance HEXFET Power MOSFET
File Size	125.06K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFW644A IRFI644A
OCR Text	026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V Lower RDS(ON): 0.214 (Typ.) IRFW/I...
Description	Advanced Power MOSFET
File Size	225.49K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	IRFW820A IRFI820A
OCR Text	026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 500V Lower RDS(ON): 2.000 (Typ.) IRFW/I...
Description	Advanced Power MOSFET
File Size	225.33K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	IRF710A
OCR Text	026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 2.815 (Typ.) 1 2 3 I...
Description	Advanced Power MOSFET (400V, 3.6ohm, 2A)
File Size	221.86K / 7 Page	View it Online	Download Datasheet

				Samtec
Part No.	QRF8-XXX-XX-X-RA-GP-XX
OCR Text	026, -052, -078 (per row) solder tail lead style -01: 1.57[.062] board *-02: 2.36[.093] board plating specification -s: selective, 30au / 50ni min on contact, matte tin on tail (use c-288-xx-s & im-t-1g36-xx-s) -l: light selec...
Description	0.8mm Q-RATE RIGHT ANGLE SOCKET ASSEMBLY
File Size	529.05K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	IRLI610A IRLW610A IRLI610ATU IRLW610ATM
OCR Text	026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 150C Operating Temperature Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS...
Description	Advanced Power MOSFET 200V N-Channel Logic Level A-FET
File Size	234.51K / 7 Page	View it Online	Download Datasheet

				Samsung semiconductor Fairchild Semiconductor
Part No.	IRFU014A IRFR014A
OCR Text	026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 60V Lower RDS(ON): 0.097 (Typ.) IRFR/U0...
Description	ADVANCED POWER MOSFET
File Size	213.94K / 7 Page	View it Online	Download Datasheet


Part No.	HSMS-285P-TR1
OCR Text	... i s + i b 0.026 = at 25 c i s + i b where n = ideality factor (see table of spice parameters) t = temperature in k i s = saturation current (see table of spice paramet...
Description	SILICON, ZERO BARRIER SCHOTTKY, HF-C BAND, MIXER DIODE
File Size	89.82K / 12 Page	View it Online	Download Datasheet

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