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2SK26 60300 LTC1326 C1206 TDA5101A BC557A Q100I 1N367
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  0.082 Datasheet PDF File

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ...Gain * Low Voltage Operation 2.0 0.2 0.60 0.65 PACKAGE DIMENSIONS in millimeters 0.3 +0.1 -0.05 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05...082 MAG .036 .058 .071 .079 .081 .083 .084 .087 .093 .095 .098 .099 .104 .103 .115 .113 .120 .12...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 50.99K  /  8 Page

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ...h Gain * Low Voltage Operation 0.3 +0.1 -0.05 PACKAGE DIMENSIONS in millimeters 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) (...082 .085 .094 .093 .098 .100 .116 .117 .120 .128 .127 .137 .144 .151 .158 .161 .160 MAG .946 .85...
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 51.33K  /  8 Page

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...n * Low Voltage Operation 2.1 0.2 1.25 0.1 PACKAGE DIMENSIONS in millimeters ORDERING INFORMATION 2 3 2.0 0.2 PART NUMBER 2SC501...082 .078 .070 .076 .065 .072 S21 ANG -8.8 -18.1 -26.0 -33.0 -39.4 -45.4 -51.0 -55.5 -59.6 -63.7 ...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...DIMENSIONS in millimeters 2.1 0.2 0.3 +0.1 -0.05 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) 1 4 0.4 +0.1 -0.05 2SC5015-...082 .088 .097 .101 .111 .117 .118 .124 .129 .135 .140 .141 .149 .149 .155 .162 .169 .169 .173 .182 ....
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    BUX48A BUV48A BUV48AFI BUX48

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. BUX48A BUV48A BUV48AFI BUX48
OCR Text ...llector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Curre...082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091 9 0.354 4...
Description    HIGH POWER NPN SILICON TRANSISTORS
RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 24V; Power: 1W; Pot-Core Transformer - separated
HIGH POWER NPN SILICON TRANSISTORS

File Size 88.73K  /  7 Page

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    BUX48C BUV48C BUV48CFI

STMICROELECTRONICS[STMicroelectronics]
Part No. BUX48C BUV48C BUV48CFI
OCR Text ...llector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current...082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091 9 0.354 4...
Description    HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

File Size 47.06K  /  6 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ... VDSS = 150V G S RDS(on) = 0.082 ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...l D VDSS = -60V RDS(on) = 0.50 G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processi...082) 2X 2.54 (.100) 2X Part Marking Information D2Pak IN TER NATION AL REC TIFIER L OGO AS SE...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...l D VDSS = -60V RDS(on) = 0.28 G ID = -11A S Third Generation HEXFETs from International Rectifier utilize advanced processi...082) 2X 2.54 (.100) 2X Part Marking Information D2Pak IN TER NATION AL REC TIFIER L OGO AS SE...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...l D VDSS = -60V RDS(on) = 0.14 G S ID = -18A Third Generation HEXFETs from International Rectifier utilize advanced processin...082) 2X 2.54 (.100) 2X Part Marking Information D2Pak IN TER NATION AL REC TIFIER L OGO AS SE...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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