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  .16 0.25a Datasheet PDF File

For .16 0.25a Found Datasheets File :: 6670    Search Time::2.156ms    
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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...C gd I D = 2.3A VDS = 10V 16 C, Capacitance (pF) 600 C oss 12 400 Ciss 8 200 Crss 4 0 1 10 100 A 0 0 2 4 6 FOR TEST CIRCUIT SEE FIGURE 11 8 10 12 14 A V DS , Drain-to-Source Voltage (V)...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ... -100 -2 -25 4 - TYP 0.09 10 16 110 65 46 82 14 42 2400 850 400 5.0 MAX -4 -25 -250 100 0.150 24 160 100 70 120 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH Drain to Source Breakdown Voltage Gate Threshold Voltage Ze...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...R dv/dt TJ, TSTG 44 2.0 3.5 2.8 16 1.7 N-Channel Maximum P-Channel 30 20 -2.3 -1.8 -10 -1.3 2.0 1.3 57 -1.3 0.25 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ...ax. Units --- --- --- --- 1.3 A 16 1.2 54 62 V ns nC --- 0.82 --- 27 --- 31 Conditions D MOSFET symbol showing the integral reverse G p-n junction diode. S TJ = 25C, I S = -1.25A, VGS = 0V TJ = 25C, IF = -1.25A di/dt = -100A/s Notes...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...TSTG Maximum 30 20 3.5 2.8 16 1.7 2.0 1.3 44 2.0 0.20 5.0 -55 to + 150 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanc...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    LP621024D LP621024D-55LL LP621024D-70LL LP621024DM-55LL LP621024DM-70LL LP621024DV-55LL LP621024DV-70LL LP621024DX-55LL

AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
Part No. LP621024D LP621024D-55LL LP621024D-70LL LP621024DM-55LL LP621024DM-70LL LP621024DV-55LL LP621024DV-70LL LP621024DX-55LL LP621024DX-70LL
OCR Text ...3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O8 I/O7 I/O6 I/...0) LP621024D 17 32 2 A9 18 A2 3 A8 19 A1 4 A13 20 A0 5 WE 21 I/O1 6 CE2 22 I...
Description 128K X 8 BIT CMOS SRAM 128K的8位CMOS的SRAM

File Size 182.65K  /  16 Page

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    MUR1605CT MUR1610CT MUR1620CT

Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Part No. MUR1605CT MUR1610CT MUR1620CT
OCR Text ...ty MUR1605CT THRU MUR1620CT 16 Amp Super Fast Glass Passivated Rectifier 50 to 200 Volts Maximum Ratings * * Operating Junction Temp...0.51 0.30 3.53 3.56 1.14 2.03 15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40...
Description 16 Amp Super Fast Glass Pass ivated Rectifier 50 to 200 Volts

File Size 57.17K  /  2 Page

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...g.E ) tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) Power Semiconductors 7 ...0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 A B C D E F G H K L M N P 4.78 2.29 1.78 1.09 1.73 ...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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    2SC4054

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4054
OCR Text ...nce AEjc Junction to case Max 4.16 *Z/W Transition Frequency fT V = 10V, 0.5A = STD 20 MHz CE C I Turn on Time ton I = 2.5A Max 0.5 C Storage Time ts I = 0.5A,1A = Max 2.0 Es B1 B2 I Fall Time tf R= 60, V = 4V Max 0.2 L BB2 Copyright & Cop...
Description Switching Power Transistor(5A NPN)

File Size 360.85K  /  12 Page

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    2SJ339

Sanyo Semicon Device
Toshiba Semiconductor
Part No. 2SJ339
OCR Text ...9] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Dr...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 39.40K  /  4 Page

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