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  diode- Datasheet PDF File

For diode- Found Datasheets File :: 135897    Search Time::5.75ms    
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    SI1902CDL-T1-GE3

Vishay Siliconix
Part No. SI1902CDL-T1-GE3
OCR Text ... i dm 2 continuous source-drain diode current t c = 25 c i s 0.35 t a = 25 c 0.25 b, c maximum power dissipation t c = 25 c p d 0.42 w t c = 70 c 0.27 t a = 25 c 0.30 b, c t a = 70 c 0.23 b, c operating junction and storage temperatu...
Description Dual N-Channel 20 V (D-S) MOSFET
   Dual N-Channel 20 V (D-S) MOSFET

File Size 239.16K  /  11 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text .... Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 38 A, VGS = 0 Reverse recovery time I F = I S, diF/dt = 100 A/s, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 ...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text DIODE Copyright (c) 1999, Power Innovations Limited, UK MAY 1999 - REVISED SEPTEMBER 1999 G Designed for Self Oscillating Inverter Applications Rugged 1500 V Planar Construction Integral Free-Wheeling Anti-Parallel Diode B C E TO...
Description NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

File Size 114.07K  /  5 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...e Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semic...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CAS300M12BM2

Cree, Inc
Part No. CAS300M12BM2
OCR Text ...et ? mosfet and z - rec ? diode module features package 62 mm x 10 6 mm x 30 mm ? ultra low loss ? high - frequency operation ? zero reverse recovery current from diode ? zero turn - off tail current fr...
Description 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module

File Size 804.44K  /  8 Page

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    Honeywell Accelerometers
Part No. SE3470-003
OCR Text ...series algaas infrared emitting diode, to-46 metal can package features l to-46 metal can package l choice of flat window or lensed package l 90 or 20 (nominal) beam angle option l 880 nm wavelength l hig...
Description SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package

File Size 79.29K  /  4 Page

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    NTB5605 NTB5605P

ON Semiconductor
Part No. NTB5605 NTB5605P
OCR Text ...ll time t f 75 150 drain-source diode characteristics forward diode voltage v sd v gs = 0 v i s = -17 a t j = 25 c -1.55 -2.5 v t j = 125 c -1.4 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = -17 a 60 ns charge ...
Description Power MOSFET -60 Volt, -18.5 Amp
   Power MOSFET -60 Volt, -18.5 Amp

File Size 86.47K  /  7 Page

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    MGBR20U50

UNISONIC TECHNOLOGIES
Part No. MGBR20U50
OCR Text diode www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r601-132.a mos g a ted barrier rectifier ? descripti on t h e ut c mgbr20 u 50 is a surface mount mos g...
Description DUAL MOS GATED BARRIER RECTIFIER

File Size 198.58K  /  3 Page

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    IKD10N60RA

Infineon Technologies AG
Part No. IKD10N60RA
OCR Text diodeinpackagesofferingspacesavingadvantage ikd10n60ra 600vtrenchstop tm rc-seriesforhardswitchingapplications datasheet industrialpowercontrol 2 ikd10n60ra trenchstop tm rc-seriesforhardswitchingapplications rev.2.2...
Description high power thyristor diode

File Size 2,145.87K  /  16 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...nce Parameter RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module Typ. --- --- 0.10 20 (...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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