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For fet-n Found Datasheets File :: 14477    Search Time::1.281ms    
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    2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2

NEC[NEC]
Part No. 2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2
OCR Text FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ357 can be directly ...N CP(K) Printed in Japan (c) 1994 2SJ357 ELECTRICAL SPECIFICATIONS (TA = +25 C) Parameter...
Description P-channel MOS FET(-30V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
From old datasheet system

File Size 63.14K  /  8 Page

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    2SJ363

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ363
OCR Text FET Application Low frequency power switching Features * Low on-resistance * Low drive current * 4 V gate drive device can be driven...n 0.5 -0.03 -0.01 0 50 100 150 Ta (C) 200 -0.1 -0.3 -1 Ta = 25 C -3 -10 -30 -100 Ambie...
Description Silicon P-Channel MOS FET

File Size 36.88K  /  7 Page

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    2SJ386

HITACHI[Hitachi Semiconductor]
Part No. 2SJ386
OCR Text FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate driv...n tio ra pe O -0.03 -0.01 0 50 100 150 Ta (C) 200 -0.1 Ta = 25 C 1 shot pulse -0.3 -1 -3 -10...
Description Silicon P-Channel MOS FET

File Size 37.10K  /  7 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text FET Application High speed power switching Features * * * * Low on-resistance Low drive current 2.5 V Gate drive device can be drive...n( 10 -0.3 Ta = 25 C -0.1 -0.5 -1 -2 -5 -10 -20 -50 Drain to Source Voltage V DS (V) 0 5...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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    2SJ399

Hitachi Semiconductor
Part No. 2SJ399
OCR Text FET ADE-208-267 1st. Edition Application Low frequency power switching Features * * * * * Low on-resistance Small package Low dri...n tio ra pe O -0.03 -0.01 50 Operation in this area is limited by R DS(on) -0.003 Ta ...
Description Silicon P-Channel MOS FET

File Size 36.00K  /  7 Page

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    2SJ411 D11219EJ1V0DS00

NEC[NEC]
Part No. 2SJ411 D11219EJ1V0DS00
OCR Text FET FOR SWITCHING The 2SJ411 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the outp...n) Lim ited ID(pulse) = -20 A P W =1 mS =1 0m 60 ID(DC) = -5 A PW DC PW =1 ...
Description    P-CHANNEL SIGNAL MOS FET FOR SWITCHING
From old datasheet system

File Size 67.31K  /  6 Page

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    2SJ448

NEC[NEC]
Part No. 2SJ448
OCR Text FET INDUSTRIAL USE DESCRIPTION The 2SJ448 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PAC...n Li m -0.1 -1 TC = 25 C Single Pulse itt ed 0 -5 -10 -15 -20 -10 -...
Description SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 117.41K  /  8 Page

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    2SJ449 2SJ449JM

NEC[NEC]
Part No. 2SJ449 2SJ449JM
OCR Text FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PAC...n TC = 25 C -0.1 Single Pulse -1.0 -10 Lim ite d -100 -1000 0 -5 -10 -...
Description Pch vertical DMOS FET MP-45F
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 116.80K  /  8 Page

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    2SJ450

HITACHI[Hitachi Semiconductor]
Part No. 2SJ450
OCR Text FET ADE-208-381 1st. Edition Application High speed power switching Features * * * * Low on-resistance. Low drive power High spee...n Ta = 25 C 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) 0 50 100 150 Tc (C) ...
Description    Silicon P-Channel MOS FET

File Size 43.82K  /  9 Page

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    2SJ451

Hitachi Semiconductor
Part No. 2SJ451
OCR Text FET ADE-208-382 1st. Edition Application Low frequency power switching Features * * * * Low on-resistance. Low drive power 2.5 V ...n 50 Ta = 25 C -1 -3 -10 -30 -100 V DS (V) Drain to Source Voltage 0 50 100 150 Ta...
Description    Silicon P-Channel MOS FET

File Size 39.56K  /  8 Page

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