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  4m-bit Datasheet PDF File

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1411AV18-200BZI CY7C1411AV18-250BZI CY7C1411AV18-300BZC CY7C1411AV18-167BZI CY7C1411AV18-250BZXC CY7C1411AV18-167BZC CY7C1411AV18-167BZXC CY7C1411AV18-167BZXI CY7C1411AV18-200BZXC CY7C1411AV18-200BZXI CY7C1411AV18-250BZC CY7C1411AV18-250BZXI CY7C1415AV18-167BZC CY7C1415AV18-167BZI CY7C1415AV18-167BZXC CY7C1415AV18-167BZXI CY7C1413AV18-300BZXI CY7C1413AV18-250BZXC CY7C1415AV18-300BZXC CY7C1415AV18-300BZI CY7C1413AV18-167BZI CY7C1415AV18-250BZXC CY7C1411AV18-300BZXC
OCR Text ...t configurations cy7c1411av18 ? 4m x 8 cy7c1426av18 ? 4m x 9 cy7c1413av18 ? 2m x 18 cy7c1415av18 ? 1m x 36 functional description the cy7c14...bit words (cy7c1411av18) or 9-bit words (cy7c1426av18) or 18-bit words (cy7c1413av18) or 36-bit word...
Description 36-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 18 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 18 QDR SRAM, 0.5 ns, PBGA165
36-Mbit QDRII SRAM 4-Word Burst Architecture 4M X 8 QDR SRAM, 0.45 ns, PBGA165

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    GS81332QT19CE-250M GS81332QT19CE-350M GS81332QT37CE-350M

GSI Technology
Part No. GS81332QT19CE-250M GS81332QT19CE-350M GS81332QT37CE-350M
OCR Text ...depth (e.g., the 8m x 36 has an 4m addressable index). parameter synopsis -350m -250m tkhkh 2.86 ns 4.0 ns tkhqv 0.45 ns 0.45 ns 16m x 18...bit byte may be masked in an y write sequence. example x18 ram write sequence using byte write en...
Description Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II 1.8
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II TM

File Size 1,600.90K  /  30 Page

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    LE25U40PCMC-AH-1

ON Semiconductor
Part No. LE25U40PCMC-AH-1
OCR Text ...bus flash me mory device with a 4m bit (512k ? 8-bit) configuration that adds a high performance dual output and dual i/o function. it uses a single 2.5 v power supply. while making the most of the features inherent to a serial flas h m...
Description Serial Flash Memory 4 Mb

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1418BV18-278BZC CY7C1418BV18-278BZI CY7C1418BV18-278BZXC CY7C1418BV18-278BZXI CY7C1416BV18-300BZC CY7C1416BV18-250BZXI CY7C1416BV18-250BZXC CY7C1416BV18-300BZXC CY7C1416BV18-250BZI CY7C1416BV18-300BZI CY7C1416BV18-300BZXI CY7C1416BV18-250BZC CY7C1416BV18-200BZXC CY7C1418BV18-250BZXC CY7C1418BV18-250BZXI CY7C1418BV18-200BZC CY7C1418BV18-200BZI CY7C1418BV18-200BZXC CY7C1418BV18-250BZI CY7C1418BV18-200BZXI CY7C1418BV18-250BZC CY7C1416BV18-200BZI
OCR Text ...006 features ? 36-mbit density (4m x 8, 4m x 9, 2m x 18, 1m x 36) ? 300-mhz clock for high bandwidth ? 2-word burst for reducing address bus...bit burst counter. addresses for read and write are latched on alternate rising edges of the input (...
Description 36-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.45 ns, PBGA165

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    LE25U40PCMC-AH-1

ON Semiconductor
Part No. LE25U40PCMC-AH-1
OCR Text ... bus flash memory device with a 4m bit (512k ? 8-bit) configuration that adds a high performance dual output and dual i/o function. it uses a single 2.5v power supply. while making the most of the features inherent to a serial flash me...
Description Serial Flash Memory

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    Analog Devices, Inc.
ANALOG DEVICES INC
http://
Part No. ADSP-21365SBSQZENG ADSP-21365SBBC-ENG ADSP-21365SBBCZENG ADSP-21365SKBC-ENG ADSP-21365SKSQ-ENG ADSP-21365SBSQ-ENG ADSP-21365SKBCZENG ADSP-21366SBSQ-ENG ADSP-21366SBSQZENG ADSP-21366SKSQ-ENG ADSP-21366SBBCZENG ADSP-21366SBBC-ENG ADSP-21366SKBC-ENG ADSP-21366SKBCZENG ADSP-21366SKSQZENG ADSP-21365SCSQZENG ADSP-21365SKSQZENG ADSP-21365SCSQ-ENG
OCR Text ...f on-chip sram and a dedicated 4m bit of on-chip mask-programmable rom code compatible with all othe r members of the sharc family the adsp-21365/6 is available with a 333 mhz core instruc- tion rate and unique audio centric peripherals su...
Description    SHARC Processor
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection

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    Elpida Memory, Inc.
Part No. UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD45128163G5-A10LT-9JF PD45128841G5-A10LT-9JF PD45128441G5-A10LT-9JF PD45128841G5-A10T-9JF PD45128163G5-A10T-9JF PD45128441G5-A10T-9JF PD45128841G5-A75T-9JF UPD45128441G5-A75T-9JF UPD45128841G5-A75T-9JF PD45128163G5-A75LT-9JF PD45128441G5-A75LT-9JF PD45128841G5-A75LT-9JF UPD45128841G5-A75LT-9JF UPD45128441G5-A10LT-9JF UPD45128441G5-A80LT-9JF UPD45128841G5-A10LT-9JF PD45128163G5-A75T-9JF UPD45128441G5-A10T-9JF
OCR Text ...0 pd45128841g5-a75t-9jf 4m 8 4 133 pd45128841g5-a80t-9jf 125 pd45128841g5-a10t-9jf 100 pd45128163g5-a...bit organization. column address is determined by a0 - a9, a11 at the clk rising edge in the read o...
Description SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1510V18-278BZC CY7C1510V18-278BZI CY7C1510V18-278BZXC CY7C1510V18-278BZXI CY7C1514V18-300BZI CY7C1514V18-278BZI CY7C1514V18-278BZXC CY7C1514V18-300BZXI CY7C1514V18-300BZC CY7C1514V18-278BZC CY7C1514V18-278BZXI CY7C1514V18-300BZXC CY7C1525V18-200BZXC CY7C1525V18-200BZI CY7C1525V18-200BZXI CY7C1525V18-250BZXI CY7C1525V18-250BZXC CY7C1525V18-250BZI CY7C1525V18-278BZXC CY7C1512V18-278BZI CY7C1514V18-250BZXI CY7C1514V18-250BZI CY7C1512V18-250BZXI CY7C1510V18-200BZXI CY7C1510V18-200BZXC
OCR Text ...c1525v18 ? 8m x 9 cy7c1512v18 ? 4m x 18 cy7c1514v18 ? 2m x 36 functional description the cy7c1510v18, cy7c1525 v18, cy7c1512v18, and cy7c15...bit words (cy7c1510v18) or 9-bit words (cy7c1525v18) or 18-bit words (cy7c1512v18) or 36-bit words (...
Description 72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, PBGA165
72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, PBGA165
72-Mbit QDR-IISRAM 2-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR-IISRAM 2-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR-II??SRAM 2-Word Burst Architecture

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    LE28F4001C LE28F4001CTS LE28F4001CTS-12

SANYO[Sanyo Semicon Device]
Part No. LE28F4001C LE28F4001CTS LE28F4001CTS-12
OCR Text 4m-bit (512k x 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) S...
Description 4m-bit (512k 8) Flash EEPROM
4m-bit (512k 】 8) Flash EEPROM
4m-bit (512k 8) Flash EEPROM
4m-bit (512k × 8) Flash EEPROM

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    Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C1520V18-278BZXI CY7C1520V18-278BZC CY7C1520V18-278BZI CY7C1520V18-278BZXC CY7C1516V18-200BZC CY7C1516V18-278BZC CY7C1516V18-250BZI CY7C1516V18-200BZI CY7C1516V18-200BZXC CY7C1516V18-250BZC CY7C1516V18-200BZXI CY7C1516V18-250BZXC CY7C1516V18-250BZXI CY7C1527V18-278BZXC CY7C1527V18-278BZXI CY7C1516V18-167BZI CY7C1516V18-167BZXI CY7C1516V18-278BZI CY7C1516V18-278BZXI CY7C1516V18-167BZC CY7C1516V18-278BZXC CY7C1516V18-167BZXC CY7C1527V18-278BZC CY7C1518V18-200BZI CY7C1518V18-250BZXI CY7C1518V18-250BZI CY7C1527V18-300BZI CY7C1527V18-250BZXC CY7C1520V18-200BZXC
OCR Text ...2-mbit density (8m x 8, 8m x 9, 4m x 18, 2m x 36) ? 300-mhz clock for high bandwidth ? 2-word burst for reducing address bus frequency ? do...bit burst counter. addresses for read and write are latched on alternate rising edges of the input ...
Description 72-Mbit DDR-II SRAM 2-Word Burst Architecture 8M X 9 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 18 DDR SRAM, 0.45 ns, PBGA165

File Size 451.11K  /  28 Page

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