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IXYS[IXYS Corporation]
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| Part No. |
IXSH15N120A
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| OCR Text |
.../lb-in. 6 300 g C
generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity Applications
nd
Max. Lead Temperature for Soldering (1.6mm from case for 10s)
* AC motor s... |
| Description |
IGBT
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| File Size |
35.88K /
2 Page |
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it Online |
Download Datasheet
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IXYS[IXYS Corporation]
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| Part No. |
IXSH10N120AU1
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| OCR Text |
...e in one package * 2 generation HDMOS process
nd TM
Mounting torque .
1.15/10 Nm/lb-in. 6 300 g C
Max. Lead Temperature for Soldering (1.6mm from case for 10s)
Low VCE(sat) - for minimum on-state conduction losses * MOS Gate tu... |
| Description |
IGBT with Diode
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| File Size |
37.32K /
2 Page |
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it Online |
Download Datasheet |
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IXYS[IXYS Corporation]
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| Part No. |
IXGH10N100U1 IXGH10N100AU1
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| OCR Text |
...D in one package 2nd generation HDMOS TM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
Applications Symbol Test Conditions ... |
| Description |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode
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| File Size |
118.44K /
6 Page |
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it Online |
Download Datasheet |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXTH8P50 IXTH7P50
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| OCR Text |
...ational standard package *Low R HDMOS process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS)
TM DS (on)
JEDEC TO-247 AD
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounti... |
| Description |
IC ARM920T MCU 200MHZ 352-PBGA 8 A, 500 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated
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| File Size |
73.78K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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